Patents by Inventor Yi-Nan Chen
Yi-Nan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9287221Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.Type: GrantFiled: January 7, 2015Date of Patent: March 15, 2016Assignee: NANYA TECHNOLOGY CORP.Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 9093471Abstract: A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.Type: GrantFiled: November 6, 2014Date of Patent: July 28, 2015Assignee: NANYA TECHNOLOGY CORP.Inventors: Chin-Te Kuo, Yi-Nan Chen, Hsien-Wen Liu
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Publication number: 20150194390Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.Type: ApplicationFiled: January 7, 2015Publication date: July 9, 2015Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 9054131Abstract: A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.Type: GrantFiled: October 25, 2011Date of Patent: June 9, 2015Assignee: Nanya Technology CorporationInventors: Jeng-Hsing Jang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8975137Abstract: A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by using the mask layer as a mask, so as to form a slit in the substrate. The etching gas includes Cl2, CF4 and CHF3, a molar ratio of CF4 to CHF3 is about 0.5-0.8, and a molar ratio of F to Cl is about 0.4-0.8, for example. Further, the step of performing the etching process simultaneously removes the mask layer.Type: GrantFiled: July 11, 2011Date of Patent: March 10, 2015Assignee: Nanya Technology CorporationInventors: Wen-Chieh Wang, Yi-Nan Chen, Hsien-Wen Liu
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Publication number: 20150064893Abstract: A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.Type: ApplicationFiled: November 6, 2014Publication date: March 5, 2015Inventors: Chin-Te Kuo, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8963282Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.Type: GrantFiled: September 14, 2011Date of Patent: February 24, 2015Assignee: Nanya Technology Corp.Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8916003Abstract: A wafer scrubber is disclosed, including a chamber, and a holder connecting to a spindle disposed in the chamber, wherein the holder supports a wafer, and the wafer spins to remove water on the wafer, and a meshed inner cup comprising a plurality of through holes disposed between the holder and a wall of the chamber, wherein the meshed inner cup receives water from a surface of the wafer and rotates around the spindle to release the water through the through holes.Type: GrantFiled: September 23, 2011Date of Patent: December 23, 2014Assignee: Nanya Technology CorporationInventors: Jeng-Hsing Jang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8912595Abstract: A trench MOS structure is disclosed. The trench MOS structure includes a substrate, an epitaxial layer, a doping well, a doping region and a trench gate. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. The trench gate is partially disposed in the doping region. The trench gate has a bottle shaped profile with a top section smaller than a bottom section, both are partially disposed in the doping well. The bottom section of two adjacent trench gates results in a higher electrical field around the trench MOS structures.Type: GrantFiled: May 12, 2011Date of Patent: December 16, 2014Assignee: Nanya Technology Corp.Inventors: Chin-Te Kuo, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8865550Abstract: A method of forming a buried bit line is provided. A substrate is provided and a line-shaped trench region is defined in the substrate. A line-shaped trench is formed in the line-shaped trench region of the substrate. The line-shaped trench includes a sidewall surface and a bottom surface. Then, the bottom surface of the line-shaped trench is widened to form a curved bottom surface. Next, a doping area is formed in the substrate adjacent to the curved bottom surface. Lastly, a buried conductive layer is formed on the doping area such that the doping area and the buried conductive layer together constitute the buried bit line.Type: GrantFiled: February 20, 2014Date of Patent: October 21, 2014Assignee: Nanya Technology Corp.Inventors: Tieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8828842Abstract: The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.Type: GrantFiled: February 5, 2014Date of Patent: September 9, 2014Assignee: Nanya Technology Corp.Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8816715Abstract: A MOS test structure is disclosed. A scribe line region is disposed on a substrate which has a first side and a second side opposite to the first side. An epitaxial layer is disposed on the first side, the doping well is disposed on the epitaxial layer and the doping region is disposed on the doping well. A trench gate of a first depth is disposed in the doping region, in the doping well and in the scribe line region. A conductive material fills the test via which has a second depth and an isolation covering the inner wall of the test via and is disposed in the doping region, in the doping well, in the epitaxial layer and in the scribe line region, to electrically connect to the epitaxial layer so that the test via is capable of testing the epitaxial layer and the substrate together.Type: GrantFiled: May 12, 2011Date of Patent: August 26, 2014Assignee: Nanya Technology Corp.Inventors: Chin-Te Kuo, Yi-Nan Chen, Hsien-Wen Liu
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Publication number: 20140213027Abstract: A method of forming a buried bit line is provided. A substrate is provided and a line-shaped trench region is defined in the substrate. A line-shaped trench is formed in the line-shaped trench region of the substrate. The line-shaped trench includes a sidewall surface and a bottom surface. Then, the bottom surface of the line-shaped trench is widened to form a curved bottom surface. Next, a doping area is formed in the substrate adjacent to the curved bottom surface. Lastly, a buried conductive layer is formed on the doping area such that the doping area and the buried conductive layer together constitute the buried bit line.Type: ApplicationFiled: February 20, 2014Publication date: July 31, 2014Applicant: NANYA TECHNOLOGY CORP.Inventors: Tieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8772119Abstract: A fabricating method of a transistor is provided. A patterned sacrificed layer is formed on a substrate, wherein the patterned sacrificed layer includes a plurality of openings exposing the substrate. By using the patterned sacrificed layer as a mask, a doping process is performed on the substrate, thereby forming a doped source region and a doped drain region in the substrate exposed by the openings. A selective growth process is performed to form a source and a drain on the doped source region and the doped drain region, respectively. The patterned sacrificed layer is removed to expose the substrate between the source and the drain. A gate is formed on the substrate between the source and the drain.Type: GrantFiled: September 20, 2011Date of Patent: July 8, 2014Assignee: Nanya Technology CorporationInventors: Kuo-Hui Su, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8758984Abstract: A method of forming gate conductor structures. A substrate having thereon a gate electrode layer is provided. A multi-layer hard mask is formed overlying the gate electrode layer. The multi-layer hard mask comprises a first hard mask, a second hard mask, and a third hard mask. A photoresist pattern is formed on the multi-layer hard mask. A first etching process is performed to etch the third hard mask, using the photoresist pattern as a first etch resist, thereby forming a patterned third hard mask. A second etching process is performed to etch the second hard mask and the first hard mask, using the patterned third hard mask as a second etch resist, thereby forming a patterned first hard mask. A third etching process is performed to etch a layer of the gate electrode layer, using the patterned first hard mask as a third etch resist.Type: GrantFiled: May 9, 2011Date of Patent: June 24, 2014Assignee: Nanya Technology Corp.Inventors: Chang-Ming Wu, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8759907Abstract: A method of forming a buried bit line is provided. A substrate is provided and a line-shaped trench region is defined in the substrate. A line-shaped trench is formed in the line-shaped trench region of the substrate. The line-shaped trench includes a sidewall surface and a bottom surface. Then, the bottom surface of the line-shaped trench is widened to form a curved bottom surface. Next, a doping area is formed in the substrate adjacent to the curved bottom surface. Lastly, a buried conductive layer is formed on the doping area such that the doping area and the buried conductive layer together constitute the buried bit line.Type: GrantFiled: April 26, 2011Date of Patent: June 24, 2014Assignee: Nanya Technology Corp.Inventors: Tieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Publication number: 20140154864Abstract: The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in the form of a grid to form a crack stop structure.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: NANYA TECHNOLOGY CORP.Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8739806Abstract: A chemical mechanical polishing (CMP) system includes a wafer polishing unit comprising a waste liquid sink for receiving a used slurry and a waste slurry drain piping for draining the used slurry; and a post-CMP cleaning unit coupled to the wafer polishing unit such that a used base chemical such as tetramethyl ammonium hydroxide (TMAH) produced from the post-CMP cleaning unit flows toward the wafer polishing unit to frequently wash at least the waste slurry drain piping in a real time fashion on a wafer by wafer basis.Type: GrantFiled: May 11, 2011Date of Patent: June 3, 2014Assignee: Nanya Technology Corp.Inventors: Li-Chung Liu, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8723261Abstract: A recessed gate transistor with cylindrical fins is disclosed. The recessed gate transistor is disposed in an active region of a semiconductor substrate. Two isolation regions disposed in the semiconductor substrate to define an active region therebetween. The recessed gate transistor includes a gate structure, a source doping region and a drain doping region. The gate structure has at least three fins forms a concave and convex bottom of the gate structure. The front fin is disposed in one of the two isolation regions, the middle fin is disposed in the active region and a last fin disposed in the other one of the two isolation regions. The front fin and the last fin are both cylindrical. A lower part of the gate structure is M-shaped when view from the source doping region to the drain doping region direction.Type: GrantFiled: April 7, 2011Date of Patent: May 13, 2014Assignee: Nanya Technology Corp.Inventors: Tieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Patent number: 8698235Abstract: A slit recess channel gate is provided. The slit recess channel gate includes a substrate, a gate dielectric layer, a first conductive layer and a second conductive layer. The substrate has a first trench. The gate dielectric layer is disposed on a surface of the first trench and the first conductive layer is embedded in the first trench. The second conductive layer is disposed on the first conductive layer and aligned with the first conductive layer above the main surface, wherein a bottom surface area of the second conductive layer is substantially smaller than a top surface area of the second conductive layer.Type: GrantFiled: August 5, 2013Date of Patent: April 15, 2014Assignee: Nanya Technology Corp.Inventors: Tieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu