Abstract: Contamination from outgassing during a deposition process is addressed by a series of equipment enhancements, including throttle valves, a dual air curtain, and a residual gas analysis (RGA) monitor. The dual air curtain can be configured to flow a first gas during wafer processing and a second gas during wafer unloading, to re-direct and capture outgassed species. The dual air curtain and the throttle valves can be programmed in an automated feedback control system that utilizes data from the RGA monitor.

Abstract: The present disclosure describes a semiconductor device manufacturing apparatus and a method for handling contamination in the semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus can include a deposition apparatus and a processor. The deposition apparatus can include a chamber, a detection module configured to detect impurities in the chamber, and a gas scrubbing device configured to remove the impurities. The processor can be configured to receive, from the detection module, an impurity characteristic associated with the impurities; compare the impurity characteristic to a baseline characteristic; and instruct the gas scrubbing device to supply a decontamination gas in the chamber based on the comparison of the impurity characteristic to the baseline characteristic.

Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a process chamber, a wafer chuck disposed in the process chamber, and an exhaust device. The exhaust device includes an exhaust tube that communicates with the process chamber, and a valve mechanism installed on the exhaust tube and configured to control the flow rate in the exhaust tube. The semiconductor apparatus further includes a cleaning-gas-supply device including a first cleaning tube that communicates with the process chamber, and a second cleaning tube that communicates with the exhaust device. When a cleaning process is performed, the cleaning-gas-supply device supplies a cleaning gas into the process chamber via the first cleaning tube, and into the valve mechanism via the second cleaning tube.

Abstract: A wafer curing apparatus including a plate configured to pass ultraviolet light. The wafer curing apparatus further includes an antireflective coating on a light incident surface of the plate. The antireflective coating has an opening in a central portion thereof. A method of curing a wafer including emitting ultraviolet light from an ultraviolet light source. The method further includes transmitting the ultraviolet light through an ultraviolet transmissive plate having an antireflective coating thereon. The antireflective coating including an opening in a central portion thereof. The method further includes irradiating a wafer with the ultraviolet light transmitted through the ultraviolet transmissive plate.