Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: A fan assembly includes a statonary support holding a rotary support operated by a motor for turning 360 degrees about a vertical axis and a plurality of fan units mounted on the rotary support. First conductors are provided to connect the motor and the fan units to rotary conducting plates which respectively contact stationary second conducting plates, and second conductors are connected to the second conducting plates, thereby preventing the conductors of the assembly from becoming tangled.