Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: The present invention provides an ultrasonic probe scanning device comprising: a disposable part and a fixed part. In the disposable part, an ultrasonic probe with a magnetic end attaches to a slide rail encapsulated in a water-containing closed area. Otherwise, in the fixed part, a magnetic holder attached to a track, and a motor for driving the magnetic holder to move back and forth on the track. When the disposable part and the fixed part be combined, it can drive the motion of ultrasonic scanning device by magnetic attraction force.

Abstract: A method of synthesizing a composite phosphor by phase transition, characterized by controlling the sintering temperature and duration, changing M2?ySi5N8:Ry phase to M1?xSi6N8 : Rx phase, thereby forming a two-phase composite phosphor, wherein proportions of the two phases of the composite phosphor are variable. As indicated by its varying CIE color coordinates, Sr1.98Si5N8:Eu2+0.02 changes from red to pink, and then to blue. The CIE color coordinates are collinear. If there is no color deviation at the two ends of the straight line, the coordinates of any color resulting from a mixture of two colors will lie on the straight line. The aforesaid synthesis method dispenses with the hassles of sintering two colored phosphors separately, thus attaining uniformity of resultant light color and cutting the costs of phosphor synthesis.

Abstract: The high color rendering index (CRI) and high thermal properties of the red nitride phosphor are proposed in the invention. The phosphor would keep the original crystal phase and reduce the change of crystal volume by replacing different atoms. In addition, the red nitride phosphor can be excited by an incident light with wavelength ranging from 370 nm to 470 nm, and that shows the red phosphor of the present invention can be applied in white light emitting diodes. Moreover, the red nitride phosphor proposed by the present invention includes the potential application in main peak modulation and FWHM adjustment, and would be helpful to improve the thermal stability problem of white light emitting diodes.