Patents by Inventor Yin Hong

Yin Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150008433
    Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.
    Type: Application
    Filed: July 8, 2014
    Publication date: January 8, 2015
    Inventors: Mengyuan Huang, Liangbo Wang, Su Li, Tuo Shi, Pengfei Cai, Wang Chen, Ching-yin Hong, Dong Pan
  • Publication number: 20140291682
    Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.
    Type: Application
    Filed: June 13, 2014
    Publication date: October 2, 2014
    Applicant: SIFOTONICS TECHNOLOGIES CO., LTD.
    Inventors: Mengyuan Huang, Pengfei Cai, Dong Pan, Liangbo Wang, Su Li, Tuo Shi, Tzung I Su, Wang Chen, Ching-yin Hong
  • Publication number: 20140241658
    Abstract: A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length.
    Type: Application
    Filed: February 21, 2014
    Publication date: August 28, 2014
    Applicant: SiFotonics Technologies Co., Ltd.
    Inventors: Changhua Chen, Dong Pan, Yanwu Zhang, Wang Chen, Pengfei Cai, Ching-yin Hong, Siying Liu
  • Publication number: 20140133508
    Abstract: Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.
    Type: Application
    Filed: November 13, 2013
    Publication date: May 15, 2014
    Applicant: SiFotonics Technologies Co., Ltd.
    Inventors: Mengyuan Huang, Liangbo Wang, Wang Chen, Ching-yin Hong, Dong Pan
  • Publication number: 20070098310
    Abstract: The invention relates to an oil-suspending and oil-retaining bearing. The bearing has a bore for the spindle of the rotor to penetrate therein. The periphery of at least one end penetrated by the bore is disposed a slotted ring inserted with the absorbent material beforehand. The end of the bearing has a plurality of guiding slots and the periphery of the bearing also has a plurality of guiding slots. Therefore, when lubricating oil seeps and diffuses due to the agitation of the spindle, the rising lubricating oil is collected by the guiding slots and guided into the slotted ring. In addition to blocking and suspending lubricating oil, the absorbent material in the slotted ring not only absorbs and store lubricating oil, but also provides the bearing the timely reuse and circulation of lubricating oil, effectively avoiding the drainage of lubricating oil and prolonging the life cycle of motor.
    Type: Application
    Filed: November 15, 2005
    Publication date: May 3, 2007
    Applicant: Sunonwealth Electric Machine Industry Co., Ltd.
    Inventors: Alex Hong, Yin Hong
  • Patent number: RE38384
    Abstract: A terminal for an electrical connector comprises a pin having a channel for receiving an electrical conductor cable. A screw threaded into the pin secures the electrical cable in the channel by applying pressure to the cable by rotation of the screw. A pressure transfer element is positioned between the screw and the channel for applying pressure from the screw to the cable in the channel to secure the cable in the opening. The pressure transfer element is mounted in such a manner as to allow movement of the element towards the cable but to prevent rotary movement of the element relative to the said channel to prevent distortion of the cable.
    Type: Grant
    Filed: October 16, 2002
    Date of Patent: January 13, 2004
    Inventor: Yin Hong Wong