Patents by Inventor Yin-Jie MA

Yin-Jie MA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser apparatus
    Patent number: 10050413
    Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: August 14, 2018
    Assignee: Landmark Optoelectronics Corporation
    Inventors: Shu-Wei Chiu, Yin-Jie Ma, Wei Lin
  • SEMICONDOCTOR LASER APPARATUS
    Publication number: 20180166857
    Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.
    Type: Application
    Filed: September 19, 2017
    Publication date: June 14, 2018
    Inventors: Shu-Wei CHIU, Yin-Jie MA, Wei LIN