Patents by Inventor Yin-Jie Pan

Yin-Jie Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method
    Patent number: 11837515
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Grant
    Filed: April 26, 2021
    Date of Patent: December 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • SEMICONDUCTOR DEVICE AND METHOD
    Publication number: 20230386947
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • Semiconductor Device and Method
    Publication number: 20210249318
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Application
    Filed: April 26, 2021
    Publication date: August 12, 2021
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • Semiconductor device and method
    Patent number: 10991636
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • Semiconductor Device and Method
    Publication number: 20190348337
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Application
    Filed: July 22, 2019
    Publication date: November 14, 2019
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • Semiconductor device and method
    Patent number: 10361137
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: July 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yin-Jie Pan, Yu-Yun Peng
  • Semiconductor Device and Method
    Publication number: 20190035704
    Abstract: A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.
    Type: Application
    Filed: January 15, 2018
    Publication date: January 31, 2019
    Inventors: Yin-Jie Pan, Yu-Yun Peng