Abstract: A directory deletion method and apparatus, and a storage server, where the directory deletion method includes receiving, by a storage server, a delete operation authentication request of a host, where the delete operation authentication request carries user information and information about a target directory, storing, by the storage server, the user information and returning a file identifier (FID) of the target directory to the host after authentication succeeds, sending, by the host to the storage server, a delete request carrying the FID, performing, by the storage server, verification on the file and the subdirectory using the user information, and deleting a successfully verified empty subdirectory and a successfully verified file. Hence, the directory deletion method and the apparatus, and the storage server improve directory deletion efficiency.

Abstract: A method for predicting the yield of manufacturing semiconductor devices includes steps of: acquiring defect data of semiconductor devices to be predicted, wherein the semiconductor devices to be predicted include finished semiconductor devices and semi-finished semiconductor devices, and the defect data indicates a defect type and location of at least one defect of the semiconductor devices; inputting the defect data into a pre-trained yield prediction model, wherein the yield prediction model includes a neural network structure and a classification structure, the neural network structure is used to extract defect feature vectors from the defect data, and the classification structure is used to output classification results of qualified or unqualified yield according to the defect feature vectors; and determining, by the yield prediction model, classification results of qualified or unqualified yield of the semiconductor devices.

Abstract: A wearable medical bandage is provided having an energy harvesting generator that harvests mechanical energy from the user's natural body and muscle motions to produce electrical energy. The electrical energy induces an electric potential across the wound opening producing accelerated skin wound recovery under the voltage fluctuations produced by the power generator.

Abstract: The present disclosure discloses a method for detecting a wafer backside defect, comprising: Step 1, providing a signal database comprising signal data corresponding to various different defects, the defects comprising convex defects and concave defects, the signal data reflecting 3D information of the corresponding defect; Step 2, performing backside scanning on a tested wafer by using oblique incident light, and collecting corresponding emitted and scattered light data; and Step 3, comparing the collected emitted and scattered light data with the signal data, and fitting a defect 3D distribution map of the backside of the tested wafer. The present disclosure can test the height or depth of a wafer backside defect and form a 3D distribution map of the wafer backside defect, which is beneficial for analyzing the source of the wafer backside defect and processing it in time, reducing the troubleshooting time and improving the product yield.

Abstract: An aspect of providing job assignment optimization includes creating a feature vector from features extracted from a new job request. Each of the features is associated with a constraint on minimum requirements with respect to a level of experience of a potential candidate. An aspect further includes creating a feature vector for each employee that includes skills attributed to the employee and instances that each of the skills have been completed, searching feature vectors generated from the employee database for the minimum requirements indicated in the new job request feature vector, searching the feature vectors of the database for the minimum requirements indicated by constraints associated with the new job request, modeling aggregate utility of past experience of employees as a weighted sum of applied utility functions, and generating a score indicating a difference between a potential post assignment and a pre-assignment utility. An aspect also includes outputting qualified candidates.

Abstract: The present disclosure discloses a method for detecting a wafer backside defect, comprising: Step 1, providing a signal database comprising signal data corresponding to various different defects, the defects comprising convex defects and concave defects, the signal data reflecting 3D information of the corresponding defect; Step 2, performing backside scanning on a tested wafer by using oblique incident light, and collecting corresponding emitted and scattered light data; and Step 3, comparing the collected emitted and scattered light data with the signal data, and fitting a defect 3D distribution map of the backside of the tested wafer. The present disclosure can test the height or depth of a wafer backside defect and form a 3D distribution map of the wafer backside defect, which is beneficial for analyzing the source of the wafer backside defect and processing it in time, reducing the troubleshooting time and improving the product yield.

Abstract: A wearable medical bandage is provided having an energy harvesting generator that harvests mechanical energy from the user's natural body and muscle motions to produce electrical energy. The electrical energy induces an electric potential across the wound opening producing accelerated skin wound recovery under the voltage fluctuations produced by the power generator.

Abstract: Embodiments of the present disclosure provide a method and apparatus for communication authentication processing, and an electronic device, where the method includes: transmitting, by a first device, a pairing request to a second device; receiving, by the first device, a pairing response transmitted by the second device, where the pairing response includes a first random value and first signature information, the first random value is configured to generate the first signature information; and acquiring, by the first device, a second random value and second signature information from a server according to the first random value and the first signature information, where the second random value and the second signature information are generated by the server according to the first random value and the first signature information, the second random value is configured to generate the second signature information.

Abstract: A directory deletion method and apparatus, and a storage server, where the directory deletion method includes receiving, by a storage server, a delete operation authentication request of a host, where the delete operation authentication request carries user information and information about a target directory, storing, by the storage server, the user information and returning a file identifier (FID) of the target directory to the host after authentication succeeds, sending, by the host to the storage server, a delete request carrying the FID, performing, by the storage server, verification on the file and the subdirectory using the user information, and deleting a successfully verified empty subdirectory and a successfully verified file. Hence, the directory deletion method and the apparatus, and the storage server improve directory deletion efficiency.

Abstract: An aspect of providing job assignment optimization includes creating a feature vector from features extracted from a new job request. Each of the features is associated with a constraint on minimum requirements with respect to a level of experience of a potential candidate. An aspect further includes creating a feature vector for each employee that includes skills attributed to the employee and instances that each of the skills have been completed, searching feature vectors generated from the employee database for the minimum requirements indicated in the new job request feature vector, searching the feature vectors of the database for the minimum requirements indicated by constraints associated with the new job request, modeling aggregate utility of past experience of employees as a weighted sum of applied utility functions, and generating a score indicating a difference between a potential post assignment and a pre-assignment utility. An aspect also includes outputting qualified candidates.

Abstract: The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.

Abstract: The present invention is related to the semiconductor manufacturing field, especially a method for monitoring alignment between contact holes and polycrystalline silicon gate by setting a plurality of equidistant contact holes with same sharp on poly-silicon and residual active area, and then obtain the process alignment profile of the quantized values in the plane in order to have a better control of process quality, thereby have a better control of the quality of the process.

Abstract: A method of inspecting misalignment of a polysilicon gate is disclosed, characterized in forming only NMOS devices in P-wells in a test wafer and utilizing an advanced electron beam inspection tool operating with a positive mode to carry out electrical defect inspection. The method can be applied in precisely figuring out the in-plane misalignment of the polysilicon gates of an in-process semiconductor product and identifying a misalignment tendency therebetween across a wafer by verifying all locations of interest thereon, thus providing a methodology for process window optimization and on-line monitoring and contributing to the manufacturing process and yield improvement.

Abstract: A method of inspecting misalignment of a polysilicon gate is disclosed, characterized in forming only NMOS devices in P-wells in a test wafer and utilizing an advanced electron beam inspection tool operating with a positive mode to carry out electrical defect inspection. The method can be applied in precisely figuring out the in-plane misalignment of the polysilicon gates of an in-process semiconductor product and identifying a misalignment tendency therebetween across a wafer by verifying all locations of interest thereon, thus providing a methodology for process window optimization and on-line monitoring and contributing to the manufacturing process and yield improvement.

Abstract: The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.

Abstract: A method of detecting the circular uniformity of semiconductor circular contact holes. Several detection circuit structures are disposed on the semiconductor wafer: N-type active regions and P-type active regions; silicon dioxide layers separate the N-type active regions from the P-type active regions; the N-type active regions are formed in the P well and the P-type active regions are formed in the N well; polysilicon gates bridge the N-type active regions and the P-type active regions; gate oxide layers insulate the P-type regions and the N-type regions from the polysilicon gates, so that the P-type regions and the N-type regions are independent; the N-type active regions connect with circular contact holes while the P-type active regions and the polysilicon gates connect with oval contact holes; a electron beam scanner detects the circular uniformity of the contact holes. This invention advantageously reflects effectively and comprehensively the circular uniformity of the contact holes.

Abstract: A method of detecting the circular uniformity of semiconductor circular contact holes. Several detection circuit structures are disposed on the semiconductor wafer: N-type active regions and P-type active regions; silicon dioxide layers separate the N-type active regions from the P-type active regions; the N-type active regions are formed in the P well and the P-type active regions are formed in the N well; polysilicon gates bridge the N-type active regions and the P-type active regions; gate oxide layers insulate the P-type regions and the N-type regions from the polysilicon gates, so that the P-type regions and the N-type regions are independent; the N-type active regions connect with circular contact holes while the P-type active regions and the polysilicon gates connect with oval contact holes; a electron beam scanner detects the circular uniformity of the contact holes. This invention advantageously reflects effectively and comprehensively the circular uniformity of the contact holes.

Abstract: The invention provides a measurement of lateral diffusion of implanted ions in the doped well regions of semiconductor devices comprising: designing a test model having active areas, the P-type and N-type doped well regions of the active areas are separated by STI, and the bottom width of the STI is determined; performing multiple processes on the test model comprising the ion implantation process and the tungsten interconnection process to simulate a semiconductor device structure, wherein during the ion implantation process, in the P-type or N-type doped well regions, only the first procedure of the ion implantation process is performed; scanning the test model, obtaining a light-dark pattern of the tungsten interconnects. The present invention is convenient and accessible and can provide reference to optimize the property of the doped well regions of the semiconductor devices and ensure the yield enhancement.

Abstract: The present invention is related to the semiconductor manufacturing field, especially a method for monitoring alignment between contact holes and polycrystalline silicon gate by setting a plurality of equidistant contact holes with same sharp on poly-silicon and residual active area, and then obtain the process alignment profile of the quantized values in the plane in order to have a better control of process quality, thereby have a better control of the quality of the process.

Abstract: A distance measurement method for use in a laser range finding device to measure a distance between the laser range finding device and a target is disclosed. The method comprises the following steps. A laser signal is sent to the target in a first time point. A reflected laser signal reflected by the target is then received. A digital signal having a plurality of signal values ranging from 0 to N is obtained by sampling the reflected laser signal with a sampling signal, wherein N is an integer larger than two. A maximum signal value among the signal values is obtained. The distance is calculated according to the first time point and a second time point where the maximum signal value is generated.