Patents by Inventor Yin-Ming Chang

Yin-Ming Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11886586
    Abstract: Behavior report generation monitors the behavior of unknown sample files executing in a sandbox. Behaviors are encoded and feature vectors created based upon a q-gram for each sample. Prototypes extraction includes extracting prototypes from the training set of feature vectors using a clustering algorithm. Once prototypes are identified in this training process, the prototypes with unknown labels are reviewed by domain experts who add a label to each prototype. A K-Nearest Neighbor Graph is used to merge prototypes into fewer prototypes without using a fixed distance threshold and then assigning a malware family name to each remaining prototype. An input unknown sample can be classified using the remaining prototypes and using a fixed distance. For the case that no such prototype is close enough, the behavior report of a sample is rejected and tagged as an unknown sample or that of an emerging malware family.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: January 30, 2024
    Assignee: Trend Micro, Inc.
    Inventors: Yin-Ming Chang, Hsing-Yun Chen, Hsin-Wen Kung, Li-Chun Sung, Si-Wei Wang
  • Patent number: 7342823
    Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: March 11, 2008
    Assignee: Industrial Technology Research Institute
    Inventors: Mean-Jue Tung, Shi-Yuan Tong, Minn-Tsong Lin, Yin-Ming Chang, Kai-Shin Li
  • Publication number: 20060138505
    Abstract: A tunneling magnetoresistance device with high magnetoimpedance effect, comprising: a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.
    Type: Application
    Filed: July 27, 2005
    Publication date: June 29, 2006
    Inventors: Mean-Jue Tung, Shi-Yuan Tong, Minn-Tsong Lin, Yin-Ming Chang, Kai-Shin Li