Patents by Inventor Yin-Ping Lee

Yin-Ping Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High aspect ratio gap fill application using high density plasma chemical vapor deposition
    Patent number: 8021992
    Abstract: A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
    Type: Grant
    Filed: September 1, 2005
    Date of Patent: September 20, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Joung-Wei Liou, Tsang-Yu Liu, Chien-Feng Lin, Cheng-Liang Chang, Ming-Te Chen, Chia-Hui Lin, Ying-Hsiu Tsai, Szu-An Wu, Yin-Ping Lee
  • High aspect ratio gap fill application using high density plasma chemical vapor deposition
    Publication number: 20070049034
    Abstract: A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 1, 2007
    Inventors: Joung-Wei Liou, Tsang-Yu Liu, Chien-Feng Lin, Cheng-Liang Chang, Ming-Te Chen, Chia-Hui Lin, Ying-Hsiu Tsai, Szu-An Wu, Yin-Ping Lee
  • Film treatment method preventing blocked etch of low-K dielectrics
    Publication number: 20060205232
    Abstract: A method for etching a dielectric material in a semiconductor device is disclosed. After providing a conductive region, a dielectric layer is formed over the conductive region. A dielectric antireflective coating (DARC) layer is further formed on the dielectric layer. Then, a moisture-removal step is performed that removes moisture from the DARC layer and from an interface region between the dielectric and the DARC layer. A masking pattern is transferred into the DARC layer and the dielectric layer.
    Type: Application
    Filed: March 10, 2005
    Publication date: September 14, 2006
    Inventors: Lih-Ping Li, Tzong-Sheng Chang, William Kuo, Tsung-Hsien Lee, Chun-Lin Tsai, Szu-An Wu, Yin-Ping Lee