Patents by Inventor Yin-Ping Wang

Yin-Ping Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12291567
    Abstract: Disclosed herein are anti-GM-CSF antibodies capable of binding to human GM-CSF and blocking its biological activities. Also provided herein are pharmaceutical compositions comprising the anti-GM-CSF antibodies and therapeutic and diagnostic uses of such antibodies.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: May 6, 2025
    Assignee: Elixiron Immunotherapeutics (Hong Kong) Limited
    Inventors: Cheng-Lun Ku, Yu-Fang Lo, Han-Po Shih, Jing-Ya Ding, Pei-Han Chung, Yin-Ping Wang
  • Publication number: 20240408177
    Abstract: The present disclosure provides IL-10 muteins and use of IL-10 muteins in fusion proteins. The IL-10 mutein or the fusion protein comprise one or more substitution on amino acids in position 104, position 107, and a combination thereof, relative to amino acids of wild-type IL-10. Advantageously, the IL-10 mutein or the fusion protein thereof are provided with reduced aggregation potency during purification and extended half-life.
    Type: Application
    Filed: October 6, 2022
    Publication date: December 12, 2024
    Inventors: Hung-Kai CHEN, Po-Hao Chang, Wei Huang, Jing-Yi Huang, Pandelakis Andreas KONI, Tsung-Hao CHANG, Shih-Rang YANG, Yin-Ping WANG
  • Publication number: 20210309732
    Abstract: Disclosed herein are anti-GM-CSF antibodies capable of binding to human GM-CSF and blocking its biological activities. Also provided herein are pharmaceutical compositions comprising the anti-GM-CSF antibodies and therapeutic and diagnostic uses of such antibodies.
    Type: Application
    Filed: March 10, 2021
    Publication date: October 7, 2021
    Applicant: ELIXIRON IMMUNOTHERAPEUTICS (HONG KONG) LIMITED
    Inventors: Cheng-Lun KU, Yu-Fang LO, Han-Po SHIH, Jing-Ya DING, Pei-Han CHUNG, Yin-Ping WANG
  • Patent number: 7605407
    Abstract: A semiconductor device includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor adjacent the gate stack and having at least a portion in the semiconductor substrate, wherein the stressor comprises an element for adjusting a lattice constant of the stressor. The stressor includes a lower portion and a higher portion on the lower portion, wherein the element in the lower portion has a first atomic percentage, and the element in the higher portion has a second atomic percentage substantially greater than the first atomic percentage.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: October 20, 2009
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yin-Ping Wang
  • Publication number: 20050026342
    Abstract: Semiconductor device having improved short channel effects and method of forming thereof. One method includes forming a gate oxide over a substrate and a gate electrode over the gate oxide, and implanting impurities into the substrate using the gate electrode as an implant mask to form a lightly-doped region in the substrate. The method includes depositing second spacer material adjacent to the gate electrode, forming a first spacer on the second spacer material, and implanting impurities into the substrate and through a portion of the lightly-doped region using the first spacer as an implant mask to form a first junction region in the substrate. The method includes removing the first spacer, etching the second spacer material to form a second spacer adjacent the gate electrode, and implanting impurities into the substrate using the second spacer as an implant mask to form a second junction region in the substrate.
    Type: Application
    Filed: July 28, 2003
    Publication date: February 3, 2005
    Inventors: Ka-Hing Fung, Yin-Ping Wang, Huan-Tsung Huang