Patents by Inventor Yin-Shuo CHU

Yin-Shuo CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device structure with anti-acid layer and method for forming the same
    Patent number: 11158659
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yin-Shuo Chu, Chi-Chung Yu, Li-Yen Fang, Tain-Shang Chang, Yao-Hsiang Liang, Min-Chih Tsai
  • Semiconductor Device Structure with Anti-Acid Layer and Method for Forming the Same
    Publication number: 20180350855
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Yin-Shuo Chu, Chi-Chung Yu, Li-Yen Fang, Tain-Shang Chang, Yao-Hsiang Liang, Min-Chih Tsai
  • SEMICONDUCTOR DEVICE STRUCTURE WITH ANTI-ACID LAYER AND METHOD FOR FORMING THE SAME
    Publication number: 20170170215
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes an interconnect structure formed over a substrate and a passivation layer formed over the interconnect structure. The semiconductor device structure also includes an anti-acid layer formed in the passivation layer and a bonding layer formed on the anti-acid layer and the passivation layer. The anti-acid layer has a thickness that is greater than about 140 nm.
    Type: Application
    Filed: December 15, 2015
    Publication date: June 15, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yin-Shuo CHU, Chi-Chung YU, Li-Yen FANG, Tain-Shang CHANG, Yao-Hsiang LIANG, Min-Chih TSAI