Patents by Inventor Yin-Ting LIN

Yin-Ting LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control circuit and operating circuit utilizing the same
    Patent number: 10818653
    Abstract: A control circuit providing an output voltage and including an N-type transistor, a first P-type transistor and a second P-type transistor is provided. The N-type transistor is coupled to a first power terminal. The first P-type transistor includes a first source, a first drain, a first gate and a first bulk. The first gate is coupled to a gate of the N-type transistor. The first bulk is coupled to the first source. The second P-type transistor includes a second source, a second drain, a second gate and a second bulk. The second source is coupled to a second power terminal. The second drain and the second bulk are coupled to the first bulk.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: October 27, 2020
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Shao-Chang Huang, Shang-Chuan Pai, Wei-Chung Wu, Szu-Chi Chen, Sheng-Chih Chuang, Yin-Ting Lin, Pei-Chun Yu, Han-Pei Liu, Jung-Tsun Chuang, Chieh-Yao Chuang, Hung-Wei Chen
  • CONTROL CIRCUIT AND OPERATING CIRCUIT UTILIZING THE SAME
    Publication number: 20190181135
    Abstract: A control circuit providing an output voltage and including an N-type transistor, a first P-type transistor and a second P-type transistor is provided. The N-type transistor is coupled to a first power terminal. The first P-type transistor includes a first source, a first drain, a first gate and a first bulk. The first gate is coupled to a gate of the N-type transistor. The first bulk is coupled to the first source. The second P-type transistor includes a second source, a second drain, a second gate and a second bulk. The second source is coupled to a second power terminal. The second drain and the second bulk are coupled to the first bulk.
    Type: Application
    Filed: December 12, 2017
    Publication date: June 13, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Shao-Chang HUANG, Shang-Chuan PAI, Wei-Chung WU, Szu-Chi CHEN, Sheng-Chih CHUANG, Yin-Ting LIN, Pei-Chun YU, Han-Pei LIU, Jung-Tsun CHUANG, Chieh-Yao CHUANG, Hung-Wei CHEN
  • Resistive memory and memory cell
    Patent number: 9941002
    Abstract: A memory unit is provided. The memory unit includes a resistive element, a diode, and a first transistor. The resistive element has a first terminal receiving a bit voltage and a second terminal coupled to a first node. The diode has an anode coupled to the first node and a cathode coupled to a second node. The second node receives a word voltage. The first transistor has a control electrode, a first electrode coupled to the first node, and a second electrode.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: April 10, 2018
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chih-Chuan Ke, Yin-Ting Lin, Yung-Chang Chen
  • RESISTIVE MEMORY AND MEMORY CELL
    Publication number: 20180053549
    Abstract: A memory unit is provided. The memory unit includes a resistive element, a diode, and a first transistor. The resistive element has a first terminal receiving a bit voltage and a second terminal coupled to a first node. The diode has an anode coupled to the first node and a cathode coupled to a second node. The second node receives a word voltage. The first transistor has a control electrode, a first electrode coupled to the first node, and a second electrode.
    Type: Application
    Filed: August 16, 2016
    Publication date: February 22, 2018
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Chuan KE, Yin-Ting LIN, Yung-Chang CHEN