Abstract: The present invention discloses a structure of pixel arrangement and a display device. The structure of pixel arrangement includes a first sub-pixel, and second sub-pixels and third sub-pixels that are provided surrounding the first sub-pixel, the first sub-pixel, portions of the second sub-pixels and portions of the third sub-pixels constituting a virtual rhombus, wherein a center of the first sub-pixel coincides with a center of the virtual rhombus; a center of the second sub-pixel coincides with a first vertex of the virtual rhombus; and a center of the third sub-pixel coincides with a second vertex of the virtual rhombus. Compared with the prior art, the number of sub-pixels required to achieve high resolution display in the present invention is smaller, so that the number of the sub-pixels is decreased.

Abstract: An organic light emitting diode display device and a display apparatus, and a mask for fabricating a sub-pixel of the organic light emitting diode display device are provided. Each pixel unit group includes a first sub-pixel unit group and a second sub-pixel unit group which are disposed adjacently along a first direction and include three sub-pixels of different colors, respectively; and the three sub-pixels in the first sub-pixel unit group and the three sub-pixels in the second sub-pixel unit group are staggered along a second direction, and a color of any sub-pixel on a base substrate 10 is different from a color of any other sub-pixel adjacent to the sub-pixel. The organic light emitting diode display device ensures that the sub-pixels of a same color are staggered regularly on the base substrate, which increases strength of the mask, and is conducive to fabrication of the sub-pixel of a small size, so that the resolution of the organic light emitting diode display device can be improved.

Abstract: The present disclosure provides a pixel arrangement structure, a display panel and a display device. The pixel arrangement structure includes a plurality of first sub-pixels, a plurality of second sub-pixels and a plurality of third sub-pixels. Each pixel includes one first sub-pixel, each second sub-pixel is shared by at least two adjacent pixels and each third sub-pixel is shared by at least two adjacent pixels. A density of the sub-pixels is 1.5 times larger than a density of the pixels in a first direction of a pixel array, and a density of the sub-pixels is 1.5 times larger than a density of the pixels in a second direction of the pixel array. The first direction is different from the second direction.

Abstract: A mask plate, a method for fabricating the same, a display panel and a display device are disclosed. The mask plate includes a shielding plate having an opening; the opening is surrounded by side sections along a thickness direction of the shielding plate. The opening includes: a notch disposed at an intersecting region between at least some of the side sections and a surface of the shielding plate, wherein an area of the opening close to the surface of the shielding plate is larger than that of the opening away from the surface of the shielding plate. The notch increases an area of a marginal region of a film layer evaporated on a base substrate and increases a flatness of the marginal region, thereby decreasing the possibility of fracture of the metal film layer to be formed thereafter due to a high step and increasing a defect-free of the products.

Abstract: A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film transistor includes a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer. The gate insulation layer is provided above the active layer, the gate, the source electrode and the drain electrode are provided on a same layer above the gate insulation layer, the active layer and the source electrode are connected through a first connection electrode, and the active layer and the drain electrode are connected through a second connection electrode. The thin film transistor can be formed by three times of patterning processes, by which the process time period is shortened, the process yield is improved, and the process cost is reduced, and so on.

Abstract: The present disclosure provides a low temperature polycrystalline silicon field effect TFT array substrate and a method for producing the same and a display apparatus.

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. Patterns comprising a gate, a gate insulating layer and a polysilicon active layer are formed on a base substrate by single patterning process. A passivation layer is formed on the substrate surface formed with the patterns, and patterns of a first via and a second via are formed on a surface of the passivation layer by single patterning process. Patterns of a source, a drain and a pixel electrode are formed on the substrate surface formed with the patterns by single patterning process. The source is electrically connected with the polysilicon active layer through the first via, and the drain is electrically connected with the polysilicon active layer through the second via. A pattern of pixel defining layer is formed on the substrate surface formed with the patterns by single patterning process.

Abstract: Provided are a threshold voltage compensation circuit of TFT and a method for the same, a shift register and a display device. The threshold voltage compensation circuit includes an input terminal, an output terminal connected to the source of the thin film transistor, a first resistor to a Kth resistor connected in series, and Kth connectable link and at least one first connectable link. Since a voltage dividing circuit having connectable links divides the voltage input to the source of the thin film transistor, such that the gate-source voltage of the thin film transistor can be changed by changing the voltage of the source of the thin film transistor when the voltage of the gate of the thin film transistor is maintained unchanged, so as to control a leakage current of the thin film transistor under a turn-off state, such that the thin film transistor can be turned off normally.

Abstract: A shift register (10), a gate driving circuit and a repairing method therefor, and a display device.

Abstract: An organic light-emitting diode (OLED) panel, a manufacturing method thereof and a display device are provided. The OLED panel comprises: a base substrate, a plurality of OLED units formed on the base substrate, and a reflective structure formed on the base substrate, disposed along the periphery of the OLED units and configured to partially or completely encircle the OLED units. The OLED unit includes an anode layer, an organic emission layer and a cathode layer. The reflective structure is provided with a reflective surface which is configured to reflect light emitted from a side terminal of the organic emission layer to the outside of the OLED panel. The OLED panel can improve the utilization rate of light emitted by the OLED units and hence improve the display quality of the OLED panel.

Abstract: Provided are a threshold voltage compensation circuit of TFT and a method for the same, a shift register and a display device. The threshold voltage compensation circuit includes an input terminal, an output terminal connected to the source of the thin film transistor, a first resistor to a Kth resistor connected in series, and Kth connectable link and at least one first connectable link. Since a voltage dividing circuit having connectable links divides the voltage input to the source of the thin film transistor, such that the gate-source voltage of the thin film transistor can be changed by changing the voltage of the source of the thin film transistor when the voltage of the gate of the thin film transistor is maintained unchanged, so as to control a leakage current of the thin film transistor under a turn-off state, such that the thin film transistor can be turned off normally.

Abstract: The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

Abstract: Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

Abstract: A shift register (10), a gate driving circuit and a repairing method therefor, and a display device.

Abstract: The invention provides a silicon-containing bianthracene derivative, a production process and use thereof, and an organic electroluminescent device. The invention belongs to the technical field of organic electroluminescence, and can give a blue light-emitting material being able to form a dense film. The silicon-containing bianthracene derivative has a molecular structure of the following general formula, wherein R group represents an aryl group having a carbon atom number of 6-14, an aromatic heterocyclic group having a carbon atom number of 8-18, a fused-ring aromatic group having a carbon atom number of 9-15, a fluorenyl group, or a triarylamino group. The silicon-containing bianthracene derivative mentioned in the invention can be used in an organic electroluminescent device.

Abstract: A thin film transistor, an array substrate, and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings.

Abstract: The invention provides a silicon-containing bianthracene derivative, a production process and use thereof, and an organic electroluminescent device. The invention belongs to the technical field of organic electroluminescence, and can give a blue light-emitting material being able to form a dense film. The silicon-containing bianthracene derivative has a molecular structure of the following general formula, wherein R group represents an aryl group having a carbon atom number of 6-14, an aromatic heterocyclic group having a carbon atom number of 8-18, a fused-ring aromatic group having a carbon atom number of 9-15, a fluorenyl group, or a triarylamino group. The silicon-containing bianthracene derivative mentioned in the invention can be used in an organic electroluminescent device.

Abstract: A thin film transistor, an array substrate, and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings.

Abstract: The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

Abstract: Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.