Abstract: The invention provides a light wiping and polishing composition comprising cerium oxide abrasive particles, an anionic polymer, a cationic polymer, a nitrogen-containing heterocyclic carboxylic acid, and a nonionic surfactant. The present invention provides polishing compositions that use a polishing liquid component for silicon oxide light rubs that is nearly free of abrasive particles, the light rub polishing composition is capable of removing the silicon oxide dielectric layer (e.g., the polishing rate is greater than 300 ?/min when the solid content is lower than 50 ppm), stopping on tungsten, silicon nitride, or polysilicon (polishing rates less than 50 ?/min, alternatively less than 20 ?/min, alternatively less than 10 ?/min).

Abstract: The present invention provides a surface treatment method of cerium oxide, comprising S1: adding a first additive to deionized water, stirring uniformly, adding cerium oxide particles, and then transferring the solution to an ultrasonic tank, ultrasonically dispersing it for 10-90 min until the cerium oxide particles are dispersed uniformly; S2: adding a second additive to the above dispersed solution, stirring uniformly, transferring it to an ultrasonic tank, ultrasonically dispersing it for 30-180 min, until the cerium oxide particles are evenly dispersed. By adding cation-containing polymer molecules, polymerized ion pairs are achieved through charge attraction, realizing double-layer coating on the surface of cerium oxide. The double-coated cerium oxide particles have a high polishing rate and leveling efficiency, much higher than the traditional alkaline ILD polishing solution with silicon oxide as the abrasive particle.

Abstract: The present disclosure provides an insulating film polishing solution, comprising: cerium oxide, an anionic polymer, a cationic polymer, an insulating film inhibitor, and water, wherein the pattern polishing rate of the polishing rate of the insulating film polishing solution is more than 5 times that of non-pattern polishing rate. The insulation film polishing solution in the present invention has good stability and can realize an automatic stop function.