Abstract: A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.

Abstract: An optically controlled semiconductor waveguide interferometer apparatus includes a Mach-Zehnder interferometer formed of semiconductor laser materials. A first optoelectronic switching means is adapted to be coupled across a first voltage potential and one of the optical paths of the interferometer. The first optoelectronic switching means has a first gap therein. Likewise, a second optoelectronic switching means is adapted to be coupled across a second voltage potential and the other of the optical paths. The second optoelectronic switching means has a respective gap therein. Light pulses are applied to the two gaps for controlling the index of refraction of the optical paths, whereby the light pulses control the interferometer so that the output intensity of the interferometer is modulated.

Abstract: The duration of a very short semiconductor laser pulse, such as that ranging from a fraction to hundreds to picoseconds, can be measured utilizing the internally generated second harmonic emission of the laser. A laser diode is driven so that light emitted therefrom can pass through a beam splitter and be reflected by the beam-splitter into a photomultiplier and into a detector, respectively. Signals received therefrom relate to the conversion efficiency of the second harmonic emission generated by the picosecond pulses and of either continuous wave emission or pulse emission whose durations can be accurately measured by photodetectors. Apparatus includes a photodiode for measuring the fundamental laser power, a photomultiplier for measuring the second harmonic power, and appropriate filters. Ammeters coupled to the photodiode and photomultiplier measure the appropriate current. The ratio of the current can be determined by a ratio circuit or a computer.

Abstract: A complete set of optical logic gates and circuits based upon direct polarization switching, and various types of optical flip-flops based upon polarization bistability, in semiconductor lasers are described. By operating the laser in the direct polarization switchable mode, logic gates and circuits such as inverter, AND, NAND, OR and NOR can be provided with two optoelectronic switches or photodetectors. With the laser being operated in the polarization bistable mode, clocked optical flip-flops are operable with a few optoelectronic switches or photodetectors.

Abstract: An optical square wave multivibrator includes a semiconductor laser that operates near the polarization transition temperature in a pure TM mode at low injection currents and switches operation to a pure TE mode at high injection currents, and vice versa. Near such temperature, the semiconductor laser experiences large hysteresis loops with high contrast ratio in its polarization-resolved power vs current characteristic while total power exhibits only slight change in hysteresis. The switching behavior of the TE mode is complementary to that of the TM mode. The laser is biased within the hysteresis loops. A current pulse applied in one direction to the laser causes it to provide a TE mode laser output, whereas a current pulse applied in the other direction causes the laser to provide a TM mode laser output.

Abstract: An InGaAsP laser structure having a support structure which contains an equal number of buffer layers and substrate layers is provided. The buffer layers of the support structure drastically reduce the tensile stress in the active layer, thereby eliminating the occurrence of undesired TM emission during normal operation. The semiconductor laser device of the present invention comprises: a support structure having one or more substrate layers and one or more buffer layers, the support structure containing an equal number of substrate layers and buffer layers, the substrate layers consisting of InP, the buffer layers consisting of In.sub.1-x' Ga.sub.x' As.sub.y' P.sub.1-y' with x'.perspectiveto.0.47y' and 0<y'.ltoreq.1, one of the substrate layers providing the lower surface of said semiconductor laser device; a first cladding layer of InP formed on the exposed buffer layer of the support structure; an active layer formed on the first cladding layer, the active layer consisting of In.sub.1-x Ga.sub.x As.sub.