Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A sensing device is provided. The sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental sensor disposed on the substrate. The temperature sensor senses temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value from the temperature sensor when the environmental sensor does not operate, and it obtains a second sensed temperature value from the temperature sensor when the environmental sensor operates. The processing circuit obtains a sensed pressure value from the pressure sensor. The processing circuit obtains at least one temperature calibration reference of the pressure sensor according to the first and second sensed temperature values and calibrates the sensed pressure value according to the temperature calibration reference.

Abstract: A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

Abstract: A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

Abstract: A sensing device is provided. The sensing device includes a processing circuit and a multi-sensor integrated single chip. The multi-sensor integrated single chip includes a substrate and a temperature sensor, a pressure sensor, and an environmental sensor disposed on the substrate. The temperature sensor senses temperature. The pressure sensor senses pressure. The environmental sensor senses an environmental state. The processing circuit obtains a first sensed temperature value from the temperature sensor when the environmental sensor does not operate, and it obtains a second sensed temperature value from the temperature sensor when the environmental sensor operates. The processing circuit obtains a sensed pressure value from the pressure sensor. The processing circuit obtains at least one temperature calibration reference of the pressure sensor according to the first and second sensed temperature values and calibrates the sensed pressure value according to the temperature calibration reference.

Abstract: A gas sensing device is adapted to detect a concentration of a target gas. The gas sensing device comprises a dielectric layer, a reference sensing portion, a target sensing portion, and a controller. The dielectric layer is disposed on a surface. The reference sensing portion and the target sensing portion are respectively disposed on a supporting side of the dielectric layer, with said supporting side facing away from the surface. The reference sensing portion includes a first conductive layer and a first sensing layer with low sensitivity to the target gas. The target sensing portion includes a second conductive layer and a second sensing layer with high sensitivity to the target gas. The controller obtains the immittance values of the first conductive layer and the second conductive layer, and calculates a concentration value of the target gas according to the immittance values and a correlation function.

Abstract: An optical encoder includes an encoding disk and an optical detector disposed to correspond to the encoding disk. The optical detector includes a plurality of optical sensors arranged to form an optical sensor array. The optical detector is provided to receive light. The optical detector includes at least one optical sensor arranged to form at least one sensor array. The width of the sensor array corresponds to an interpolation period of the optical encoder.

Abstract: An optical encoder includes an encoding disk and an optical detector disposed to correspond to the encoding disk. The optical detector includes a plurality of optical sensors arranged to form an optical sensor array. The optical detector is provided to receive light. The optical detector includes at least one optical sensor arranged to form at least one sensor array. The width of the sensor array corresponds to an interpolation period of the optical encoder.

Abstract: A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

Abstract: A gas sensing device is adapted to detect a concentration of a target gas. The gas sensing device comprises a dielectric layer, a reference sensing portion, a target sensing portion, and a controller. The dielectric layer is disposed on a surface. The reference sensing portion and the target sensing portion are respectively disposed on a supporting side of the dielectric layer, with said supporting side facing away from the surface. The reference sensing portion includes a first conductive layer and a first sensing layer with low sensitivity to the target gas. The target sensing portion includes a second conductive layer and a second sensing layer with high sensitivity to the target gas. The controller obtains the immittance values of the first conductive layer and the second conductive layer, and calculates a concentration value of the target gas according to the immittance values and a correlation function.

Abstract: A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

Abstract: A resistive gas sensor is provided. The resistive gas sensor includes a sensing circuit and a determination circuit. The sensing circuit senses a gas to generate a detection signal. The determination circuit performs a frequency-division operation on the detection signal by a frequency-division parameter to generate a frequency-division signal, counts a half of a period of the frequency-division signal to generate a half-period count value, and determines concentration of the gas according to the half-period count value. The determination circuit determines the frequency-division parameter according to the half-period count value.

Abstract: A MEMS apparatus for thermal energy control including a sensor and an IC chip is provided. The sensor includes a heating device for heating a sensing element and a detecting device for detecting a physical quantity. The IC chip includes a memory unit for storing a target value of the sensing element and a data processing unit for convert the physical quantity to a converted value, where a gap value is defined by subtracting the converted value from the target value. Besides, a control unit of the IC chip sets a parameter value according to the gap value, and a driving unit adjusts a quantity of thermal energy generated by the heating device according to the parameter value to reduce heating time and frequency of the heating device thereby reducing electrical power consumption. The MEMS apparatus is applicable to MEMS sensors requiring controlled operating temperature, such as a gas sensor.

Abstract: A resistive gas sensor is provided. The resistive gas sensor includes a sensing circuit and a determination circuit. The sensing circuit senses a gas to generate a detection signal. The determination circuit performs a frequency-division operation on the detection signal by a frequency-division parameter to generate a frequency-division signal, counts a half of a period of the frequency-division signal to generate a half-period count value, and determines concentration of the gas according to the half-period count value. The determination circuit determines the frequency-division parameter according to the half-period count value.

Abstract: A MEMS apparatus for thermal energy control including a sensor and an IC chip is provided. The sensor includes a heating device for heating a sensing element and a detecting device for detecting a physical quantity. The IC chip includes a memory unit for storing a target value of the sensing element and a data processing unit for convert the physical quantity to a converted value, where a gap value is defined by subtracting the converted value from the target value. Besides, a control unit of the IC chip sets a parameter value according to the gap value, and a driving unit adjusts a quantity of thermal energy generated by the heating device according to the parameter value to reduce heating time and frequency of the heating device thereby reducing electrical power consumption. The MEMS apparatus is applicable to MEMS sensors requiring controlled operating temperature, such as a gas sensor.

Abstract: The present invention discloses an event detection method for waking up a portable electronic device and an action sensor using same. The event detection method includes the steps of: under a normal operation mode, sensing action events by the action sensor with a first data sensing frequency, wherein the action sensor operates by a normal current to detect the action events; entering into a sleep mode; under the sleep mode, detecting a wake-up event by the action sensor with a second data sensing frequency, wherein the action sensor operates by a weak current to detect the wake-up event, wherein the weak current is smaller than the normal current, and the second data sensing frequency is not higher than the first data sensing frequency; and returning to the normal operation mode when the wake-up event is detected.

Abstract: The present invention discloses an event detection method for waking up a portable electronic device and an action sensor using same. The event detection method includes the steps of: under a normal operation mode, sensing action events by the action sensor with a first data sensing frequency, wherein the action sensor operates by a normal current to detect the action events; entering into a sleep mode; under the sleep mode, detecting a wake-up event by the action sensor with a second data sensing frequency, wherein the action sensor operates by a weak current to detect the wake-up event, wherein the weak current is smaller than the normal current, and the second data sensing frequency is not higher than the first data sensing frequency; and returning to the normal operation mode when the wake-up event is detected.

Abstract: This invention provides a signal processing method of multiple micro-electro-mechanical system devices. The signal processing method includes: providing at least two MEMS devices; applying driving or modulating signals of different frequencies to the MEMS devices such that the MEMS devices generate respective MEMS signals with respective frequencies; and combining the MEMS signals with respective frequencies into one or more multi-frequency signals and outputting the multi-frequency signals, wherein a number of the multi-frequency signals is less than a number of the MEMS signals with respective frequencies. This invention also provides a combo MEMS device integrating two or more MEMS devices and two or more vibration sources.

Abstract: A rotation velocity sensor includes a driving unit, a proof mass, a rotation sensing element, a compensating unit, and a rotation sensing unit. The driving unit generates a vibration driving signal and a reference signal. The proof mass is driven by the vibration driving signal to vibrate in a first direction. The rotation sensing element senses a vibration of the proof mass to generate a charge signal which corresponds to a portion of the vibration of the proof mass in a second direction orthogonal to the first direction. The compensating unit generates a compensation signal according to the reference signal. The rotation sensing unit converts the charge signal to a voltage signal or a current signal, and compensates the voltage signal or the current signal according to the compensation signal to cancel a noise in the second direction.

Abstract: This invention provides a signal processing method of multiple micro-electro-mechanical system devices. The signal processing method includes: providing at least two MEMS devices; applying driving or modulating signals of different frequencies to the MEMS devices such that the MEMS devices generate respective MEMS signals with respective frequencies; and combining the MEMS signals with respective frequencies into one or more multi-frequency signals and outputting the multi-frequency signals, wherein a number of the multi-frequency signals is less than a number of the MEMS signals with respective frequencies. This invention also provides a combo MEMS device integrating two or more MEMS devices and two or more vibration sources.