Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: The present invention discloses a detection device and a probe module thereof, wherein an electrical connection path between a battery detection frame and a battery under test is provided via the probe module. The probe module includes a base, a first polarity plate, a second polarity plate, a first upper connection group, a second upper connection group, a first lower connection member and a second lower connection member. Via the first polarity plate, the first upper connection group is correspondingly coupled to the battery detection frame, and the first lower connection member is correspondingly coupled to the battery under test. Via the second polarity plate, the second upper connection group is correspondingly coupled to the battery detection frame, and the second lower connection member is correspondingly coupled to the battery under test. Thus, it is not necessary to process a cable having been fixed on the battery detection frame when the probe module is replaced.

Abstract: An optical lens includes a first lens group and a second lens group. The first lens group has at least two lenses that include at least one aspheric lens, the second lens group has at least four lenses that includes at least one aspheric lens, and a total number of lenses with refractive powers in the optical lens is smaller than nine. The first and the second lens groups include a first lens, a second lens, a third lens, a fourth lens, a fifth lens and a sixth lens in order from the magnified side to the minified side. The first lens to the sixth lens have respective refractive powers of negative, negative, positive, positive, negative and positive.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A signal receiver includes a first transistor, a second transistor, a load circuit, an amplifying circuit and a load circuit. The first transistor has a first end receiving a power voltage, and a control end receive a first input signal. The second transistor has a first end receiving the power voltage, and a control end receiving a second input signal, wherein the first input signal and the second input signal are differential signals and transit between a first voltage and a reference ground voltage, the first voltage is larger than the power voltage. The load circuit is coupled to the first transistor and the second transistor. The amplifying circuit generates an output signal according a first signal on the second end of the first transistor and a second signal on the second end of the second transistor.

Abstract: A dual-purpose sterilization box includes an outer box set provided with sterilization light source elements, an inner box placed in a housing space inside the outer box set and provided with through holes on side walls thereof corresponding to the sterilization light source elements so that the sterilization light source elements can emit sterilization light into the housing space around 360 degrees to sterilize items placed in the housing space. A light guide box for storing food can be placed in the housing space, so that sterilization light source elements in the outer box set can emit sterilization light to an optical structure of light incident portion of the light guide box and a light emitting surface of the light guide box can project the incident sterilization light into the sterilization space in the light guide box through 360 degrees to sterilize the storage food.

Abstract: A hybrid transmitter includes a current-mode driver, a voltage-mode driver and an auxiliary driver. The current-mode driver is configured to perform a current transmission. The voltage-mode driver is configured to perform a voltage transmission. The auxiliary driver, coupled to the current-mode driver and the voltage-mode driver, is configured to cooperate with the current-mode driver to enhance a driving capability of the current transmission and cooperate with the voltage-mode driver to enhance a driving capability of the voltage transmission.