Patents by Inventor Ying-Chia Huang

Ying-Chia Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Patent number: 11949000
    Abstract: A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench between the gate spacers, which includes trimming top portions of the gate spacers to form a funnel-like opening in the gate trench, and forming a metal gate structure in the gate trench. A semiconductor structure includes a fin protruding from a substrate, a metal gate structure disposed over the fin, gate spacers disposed on sidewalls of the metal gate structure, where a top surface of each gate spacer is angled toward the semiconductor fin, a dielectric layer disposed over the top surface of each gate spacer, and a conductive feature disposed between the gate spacers to contact the metal gate structure, where sidewalls of the conductive feature contact the dielectric layer.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, Ying Hsin Lu, I-Shan Huang
  • Publication number: 20130180864
    Abstract: An improved electrolytic method for fabricating transparent conductive multi-component metal oxide powders is disclosed. By adjusting pH-value, the metal compositions that a transparent conductive oxide film requires are electrolyzed to form individual metal ion precursory solutions under the condition not to precipitate the solution. Then, the individual metal ion precursory solutions with the required composition ratio are mixed and the precipitate reaction is performed. Finally, transparent conductive multi-component oxide powders with the controlled composition ratio and composition homogeneity are obtained by calcining the washed, filtered, and dried co-precipitates.
    Type: Application
    Filed: January 16, 2012
    Publication date: July 18, 2013
    Inventors: Hsin-Chun LU, Chia-Wei Li, Chen-Sung Chang, Ying-Yung Li, Jhih-Wei Mao, Ying-Chia Huang