Patents by Inventor Ying Chieh Hung
Ying Chieh Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250055184Abstract: Some implementations are directed to a wireless receiver. In some implementations, the wireless receiver may include a receiver body encompassing one or more antenna elements, a cover removably coupled to the receiver body, and a mounting bracket removably coupled to the receiver body. In some implementations, at least one of the one or more antenna elements, the cover, or the mounting bracket is movable with respect to the receiver body in order to align the wireless receiver with a signal path.Type: ApplicationFiled: August 7, 2023Publication date: February 13, 2025Applicant: Verizon Patent and Licensing Inc.Inventors: Robert STEWART, Amrit Bamzai, Andrew Nicholas Toth, Jonathan Simmons, Hyunno Yun, Caleb Jones, Reid Schlegel, James Lanzilotta, Anthony Camarda, Ming Hung Hung, Po Chang Chu, Ying Chih Liu, YuanYu Chen, Yi Chieh Lin
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Patent number: 12204163Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: February 5, 2024Date of Patent: January 21, 2025Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Publication number: 20240419262Abstract: The present application provides a mouse device, comprising: a shell, a frame, a plurality of springs and a circuit board. The shell has a plurality of key panels which are equipped with cylinders, each of which has ends provided with a pressing face and a stop face opposite to each other; the circuit board is fixed in the shell and equipped with a plurality of switches; the frame is fixed in the shell; each of the springs is respectively fixed to two corresponding points of the frame, corresponding to the position of each of the cylinders, and each spring is springily pressed against the stop face; each of the cylinders is pulled down in the direction of each of the switches via springy pressing of each of the springs against each of the stop faces.Type: ApplicationFiled: October 14, 2022Publication date: December 19, 2024Applicant: Voyetra Turtle Beach, Inc.Inventors: Ying Chieh HUNG, Chieh Hua YUAN
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Patent number: 10297453Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).Type: GrantFiled: March 26, 2018Date of Patent: May 21, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
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Patent number: 10163669Abstract: A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.Type: GrantFiled: January 29, 2016Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Chieh Hung, Ming-Hua Yu, Yi-Hung Lin, Jet-Rung Chang
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Patent number: 10049886Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.Type: GrantFiled: October 30, 2014Date of Patent: August 14, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hung Lin, Sheng-Shin Lin, Ying-Chieh Hung, Yu-Ting Huang, Tze-Liang Lee
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Publication number: 20180218912Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).Type: ApplicationFiled: March 26, 2018Publication date: August 2, 2018Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
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Patent number: 9947540Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).Type: GrantFiled: July 31, 2015Date of Patent: April 17, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
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Patent number: 9746310Abstract: A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into an estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.Type: GrantFiled: November 6, 2015Date of Patent: August 29, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ying-Chieh Hung, Yi-Hung Lin, Yu-Wei Chou
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Publication number: 20170221739Abstract: A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Inventors: Ying-Chieh HUNG, Ming-Hua YU, Yi-Hung LIN, Jet-Rung CHANG
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Publication number: 20170131084Abstract: A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into a estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.Type: ApplicationFiled: November 6, 2015Publication date: May 11, 2017Inventors: Ying-Chieh HUNG, Yi-Hung LIN, Yu-Wei CHOU
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Publication number: 20170032972Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).Type: ApplicationFiled: July 31, 2015Publication date: February 2, 2017Inventors: Cheng-Yen Tsai, Da-Yuan Lee, JoJo Lee, Ming-Hsing Tsai, Hsueh Wen Tsau, Weng Chang, Ying-Chieh Hung, Yi-Hung Lin
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Publication number: 20160126105Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.Type: ApplicationFiled: October 30, 2014Publication date: May 5, 2016Inventors: Yi-Hung Lin, Sheng-Shin Lin, Ying-Chieh Hung, Yu-Ting Huang, Tze-Liang Lee
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Patent number: 6798397Abstract: A roller for an input device extends through a slot in a top housing and is supported by a cantilevered arm. The roller is attached at the end of the arm and rotates about a shaft mounted on the cantilevered arm. The cantilevered arm is attached proximate the rear of the top housing, and thus is free to flex when the roller is depressed. As a result, when pressure is applied to the roller, the roller depresses through the slot in the top housing independently from the buttons on the top housing. The cantilevered arm has a spring force to bias the roller upward, eliminating the need for a return spring (lift spring).Type: GrantFiled: October 15, 2001Date of Patent: September 28, 2004Assignee: Logitech Europe S.A.Inventors: Denis O'Keeffe, Ying Chieh Hung, Neil O'Connell
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Publication number: 20030071788Abstract: A roller for an input device extends through a slot in a top housing and is supported by a cantilevered arm. The roller is attached at the end of the arm and rotates about a shaft mounted on the cantilevered arm. The cantilevered arm is attached proximate the rear of the top housing, and thus is free to flex when the roller is depressed. As a result, when pressure is applied to the roller, the roller depresses through the slot in the top housing independently from the buttons on the top housing. The cantilevered arm has a spring force to bias the roller upward, eliminating the need for a return spring (lift spring).Type: ApplicationFiled: October 15, 2001Publication date: April 17, 2003Applicant: Logitech Europe S.A.Inventors: Denis O'Keeffe, Ying Chieh Hung, Neil O'Connell