Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline derivatives is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and a solvent including an organic amine. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) derivatives using the catalyst composition is also provided.

Abstract: A catalyst for methanation reaction and a method for preparing methane are provided. The catalyst for methanation reaction includes a core, a shell encapsulating the core, and an active metal. The core includes cerium dioxide (CeO2), the shell includes zirconium dioxide (ZrO2), and the active metal is in particle form and is disposed on an outer surface of the shell layer.

Abstract: A method for degrading polyethylene terephthalate is provided. The method includes: providing polyethylene terephthalate material, providing a catalyst composite including a porous carrier having a pore size of 45 ? to 250 ? and a metal compound including at least one selected from a group consisting of zinc oxide, zinc hydroxide, zinc carbonate, magnesium oxide, calcium oxide, zirconium oxide, and titanium dioxide, in which the metal oxide is loaded on the porous carrier; and performing a degradation reaction, in which the polyethylene terephthalate material is reacted with the catalyst composite in the presence of an alcohol solvent.

Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline derivatives is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and a solvent including an organic amine. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) derivatives using the catalyst composition is also provided.

Abstract: A catalyst composition for hydrogenating 4,4?-methylenedianiline is provided. The catalyst composition includes a carrier including aluminum oxide and magnesium oxide, a rhodium-ruthenium active layer loaded on the surface of the carrier, and organic amine solvent. The weight percentage of magnesium oxide in the carrier is between 12% and 30%. A method for preparing 4,4?-methylene bis(cyclohexylamine) using the catalyst composition is also provided.

Abstract: A ceramic composition which can be used as a sintering aid includes 1-2 mol % of magnesium oxide (MgO), 5-15 mol % of aluminum oxide (Al2O3), 25-40 mol % of silicon dioxide (SiO2), 40-55 mol % of calcium oxide (CaO), 0.1-8 mol % of ferric oxide (Fe2O3), 0.1-2 mol % of sulfur trioxide (SO3) and 0.1-2 mol % of titanium oxide (TiO2). Alternatively, the ceramic composition includes 1-8 mol % of MgO, 5-15 mol % of Al2O3, 25-40 mol % of SiO2, 40-55 mol % of CaO, 0.1-8 mol % of Fe2O3, 0.1-2 mol % of SO3 and 0.9-2 mol % of TiO2.

Abstract: A thin film resistor has a higher resistivity compared to that of a conventional thin film resistor. The thin film resistor includes 30-45 at % of nickel, 15-30 at % of chromium, 1-10 at % of manganese, 10-30 at % of yttrium and 1-20 at % of tantalum.

Abstract: A ceramic composition which can be used as a sintering aid includes 1-2 mol % of magnesium oxide (MgO), 5-15 mol % of aluminum oxide (Al2O3), 25-40 mol % of silicon dioxide (SiO2), 40-55 mol % of calcium oxide (CaO), 0.1-8 mol % of ferric oxide (Fe2O3), 0.1-2 mol % of sulfur trioxide (SO3) and 0.1-2 mol % of titanium oxide (TiO2). Alternatively, the ceramic composition includes 1-8 mol % of MgO, 5-15 mol % of Al2O3, 25-40 mol % of SiO2, 40-55 mol % of CaO, 0.1-8 mol % of Fe2O3, 0.1-2 mol % of SO3 and 0.9-2 mol % of TiO2.

Abstract: A thin film resistor has a higher resistivity compared to that of a conventional thin film resistor. The thin film resistor includes 30-45 at % of nickel, 15-30 at % of chromium, 1-10 at % of manganese, 10-30 at % of yttrium and 1-20 at % of tantalum.

Abstract: A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

Abstract: Catalyst for hydrogenation of 1,3-cyclobutanediketone compound is provided, which includes a support and VIIIB group transition metal loaded thereon. The support includes a first oxide powder with a surface wrapped by a second oxide. The first oxide includes silicon oxide, aluminum oxide, zirconium oxide, titanium oxide, zinc oxide, or a combination thereof. The second oxide has a composition of MxAl(1-x)O(3-x)/2, M is alkaline earth metal, and x is from 0.3 to 0.7.

Abstract: A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

Abstract: Catalyst for hydrogenation of 1,3-cyclobutanediketone compound is provided, which includes a support and VIIIB group transition metal loaded thereon. The support includes a first oxide powder with a surface wrapped by a second oxide. The first oxide includes silicon oxide, aluminum oxide, zirconium oxide, titanium oxide, zinc oxide, or a combination thereof. The second oxide has a composition of MxAl(1-x)O(3-x)/2, M is alkaline earth metal, and x is from 0.3 to 0.7.