Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer and a first alignment layer. The first alignment layer is disposed between the first electrode layer and the ferroelectric layer, and the ferroelectric layer and the first alignment layer have the same crystal lattice orientation. In some embodiments, a material of the first alignment layer has a band gap smaller than 50 meV.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disposed between the first electrode layer and the second electrode layer.

Abstract: A Car Door Inner Handle Base Repair Method is a technique used to repair the fracture and separation of the welding post between the car door inner handle base and the inner door panel body without the need to replace the entire car door inner panel assembly. This method involves creating an identical repair component by copying the car door inner handle base. The repair component includes multiple corresponding through-posts, aligned with the welding posts of the damaged inner door panel body and the damaged car door inner handle base. To execute the repair, the damaged inner door panel body is drilled with holes corresponding to the through-posts, and the repair component's multiple through-posts are inserted into the corresponding holes on the damaged inner door panel, securing the repair component in place using locking mechanisms.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Abstract: A method and structure for reinforcing a car tailgate handle is used to strengthen a tailgate handle that is prone to breaking. Through the steps of disassembly, measurement, production of reinforcement parts, assembly of reinforcement parts and original parts, and installation, it is possible to quickly and extensively remedy tailgate handles with mechanical structural defects that have already been sold. This method and structure offer advantages such as simplified design, reduced material usage, environmental friendliness, ease of production, and rapid mass production.

Abstract: A method and reinforcement structure of a car door outside handle, used to replace a damaged car door handle. The process involves disassembling, measuring, manufacturing reinforcing components, assembling the reinforcing parts with original components, and installation. This method allows for rapid and mass production, utilizing a structure with embedded reinforcing components to strengthen the weaker areas of the original car door outside handle. It offers advantages such as simplified structure, reduced material usage, environmental friendliness, ease of production, and efficient mass production.

Abstract: A car tailgate handle base reinforcement and repair structure is designed to be integrated with a car tailgate handle joint. It comprises the following features: a handle base with one side being a connecting surface and the other side being an exposed surface. The connecting surface has a pivot pin on one side and an elastic pin on the opposite side. At least one reinforcement pin, placed at an appropriate location on the connecting surface, and equipped with a tab slot. A flexible tab, with one part of the tab being shaped to correspond with the tab slot's interior and the other part forming a flat spring portion. In this structure, the flexible tab is inserted into the tab slot through the connecting part, forming a connection with the reinforcement pin.

Abstract: A Car Door Inner Handle Base Repair Method is a technique used to repair the fracture and separation of the welding post between the car door inner handle base and the inner door panel body without the need to replace the entire car door inner panel assembly. This method involves creating an identical repair component by copying the car door inner handle base. The repair component includes multiple corresponding through-posts, aligned with the welding posts of the damaged inner door panel body and the damaged car door inner handle base. To execute the repair, the damaged inner door panel body is drilled with holes corresponding to the through-posts, and the repair component's multiple through-posts are inserted into the corresponding holes on the damaged inner door panel, securing the repair component in place using locking mechanisms.

Abstract: A device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness between approximately 1 ?m and approximately 30 ?m.

Abstract: A semiconductor device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer includes SrRuO3, InGaZnO (IGZO) or LaSrMnO.

Abstract: A semiconductor package includes a first die, a second die, and a hybrid-type adhesive. The second die is stacked on the first die through the hybrid-type adhesive. The hybrid-type adhesive includes a conductive adhesive and a non-conductive adhesive. The conductive adhesive is disposed between the non-conductive adhesive and the first die. The non-conductive adhesive is disposed between the conductive adhesive and the second die.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disposed between the first electrode layer and the second electrode layer.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Abstract: A semiconductor device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer includes SrRuO3, InGaZnO (IGZO) or LaSrMnO.

Abstract: A semiconductor package includes a first die, a second die, and a hybrid-type adhesive. The second die is stacked on the first die through the hybrid-type adhesive. The hybrid-type adhesive includes a conductive adhesive and a non-conductive adhesive. The conductive adhesive is disposed between the non-conductive adhesive and the first die. The non-conductive adhesive is disposed between the conductive adhesive and the second die.

Abstract: A semiconductor device includes a substrate, a gate stack over the substrate, a channel layer over the gate stack, and a source/drain electrode. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The source/drain electrode is formed on the channel layer and disposed on sides of the gate stack.

Abstract: A semiconductor device includes a substrate, a gate stack over the substrate, a channel layer over the gate stack, and a source/drain electrode. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The source/drain electrode is formed on the channel layer and disposed on sides of the gate stack.

Abstract: A semiconductor package includes a substrate, an electronic component, a dielectric layer a transmitting antenna, a receiving antenna and a FSS (Frequency selective surface) antenna. The electronic component is disposed on and electrically connected with the substrate. The dielectric layer has a dielectric upper surface. The transmitting antenna and the receiving antenna are formed adjacent to the substrate. The FSS antenna is formed adjacent to the dielectric upper surface of the dielectric layer. The FSS antenna is separated from the substrate by the dielectric layer in a wireless signal emitting direction.

Abstract: A vehicle door handle including an RFID module and a button module cooperates with a vehicle controller and a remote control. The button module triggers the RFID module to transmit a querying code to the remote control upon being pressed. The remote control transmits a confirmation code and a remote ID code to the RFID module, and the RFID module determines whether the confirmation code corresponds to the querying code. If yes, the RFID module further forwards the remote ID code to the controller in order for the controller to determine whether the remote ID code is identical with a pre-stored ID code, and to control a lock actuator to switch from a locking position to an unlocking position, or vice versa, when it is determined that the remote ID code is identical with the pre-stored ID code.