Abstract: A self-driven power generation module and a manufacturing method thereof are provided. The self-driven power generation module includes an upper structure, a lower structure, and a charge accumulation layer. The upper structure includes a first encapsulating layer, a first supporting layer, and a first electrode layer. The first supporting layer contacts the first encapsulating layer. The first electrode layer contacts the first supporting layer. The lower structure is spaced apart from the upper structure. The lower structure includes a second encapsulating layer, a second supporting layer, a second electrode layer, a third supporting layer, and a third electrode layer. The third supporting layer is disposed on the second encapsulating layer and spaced apart from the second supporting layer. The third electrode layer is disposed on the third supporting layer. The charge accumulation layer is disposed between the upper structure and the lower structure.

Abstract: Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.

Abstract: The invention provides an inorganic light emitting memory, comprising resistive memory in tandem with inorganic light emitting element. It is ready to be extended into many other material systems for practical applications. In view of the unique features demonstrated by the integration of light emitters and memories, the inorganic light emitting memory may open up a new route for the development of integrated optoelectronic devices, optical communication, digital memories and recordable display panels and the likes.

Abstract: The present invention relates to a flexible and stretchable graphene film, comprising a graphene layer and a functional layer formed on the graphene layer; a preparing method of the graphene film. The present invention further relates to a method of producing a graphene film, comprising: (a) providing a carrier, and a graphene layer is formed on the surface of the carrier, (b) forming a functional layer containing an insulating polymer and a conductive material on a top portion of the graphene film; and (c) dissolving the carrier by an etchant. Without harsh synthesis and complicated fabrication steps, the graphene film of the present invention is able to transfer onto various substrates, and is largely beneficial to various electronic applications.