Abstract: A first and second patterned circuit layer are formed on a first surface and a second surface of a base material. A first adhesive layer is formed on the first patterned circuit layer. A portion of the first surface is exposed by the first patterned circuit layer. The metal reflection layer covers the first insulation layer and a reflectance thereof is greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer, and the first adhesive layer is disposed between the first patterned circuit layer and the first insulation layer. A transparent adhesive layer and a protection layer are formed on the metal reflection layer. The transparent adhesive layer is disposed between the metal reflection layer and the protection layer. The protection layer comprises a transparent polymer. The light transmittance is greater than or equal to 80%.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Abstract: Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.

Abstract: The invention provides an inorganic light emitting memory, comprising resistive memory in tandem with inorganic light emitting element. It is ready to be extended into many other material systems for practical applications. In view of the unique features demonstrated by the integration of light emitters and memories, the inorganic light emitting memory may open up a new route for the development of integrated optoelectronic devices, optical communication, digital memories and recordable display panels and the likes.

Abstract: The present invention relates to a flexible and stretchable graphene film, comprising a graphene layer and a functional layer formed on the graphene layer; a preparing method of the graphene film. The present invention further relates to a method of producing a graphene film, comprising: (a) providing a carrier, and a graphene layer is formed on the surface of the carrier, (b) forming a functional layer containing an insulating polymer and a conductive material on a top portion of the graphene film; and (c) dissolving the carrier by an etchant. Without harsh synthesis and complicated fabrication steps, the graphene film of the present invention is able to transfer onto various substrates, and is largely beneficial to various electronic applications.