Patents by Inventor Ying-Chuen Wang

Ying-Chuen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240339327
    Abstract: A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.
    Type: Application
    Filed: June 20, 2024
    Publication date: October 10, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Hsien Li, Ying-Chuen Wang, Chieh-Yi Shen, Li-Min Chen, Ming-Hsi Yeh, Kuo-Bin Huang
  • Patent number: 12046476
    Abstract: A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: July 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Hsien Li, Ying-Chuen Wang, Chieh-Yi Shen, Li-Min Chen, Ming-Hsi Yeh, Kuo-Bin Huang
  • Publication number: 20230307240
    Abstract: A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.
    Type: Application
    Filed: March 25, 2022
    Publication date: September 28, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Hsien Li, Ying-Chuen Wang, Chieh-Yi Shen, Li-Min Chen, Ming-Hsi Yeh, Kuo-Bin Huang