Abstract: A method for forming an indium gallium nitride quantum well structure is disclosed. The method includes forming a gallium nitride microdisk on a substrate, with the gallium nitride microdisk having an inverted pyramid form and an end face; and forming multiple quantum well layers on the end face, with each quantum well layer including an indium gallium nitride quantum well and a barrier layer. The indium gallium nitride quantum well is grown at a growth temperature adjusted using a trend equation within a temperature range of 480° C. to 810° C.

Abstract: A separator for an air compressor to separate aqueous vapor and oil gas from an air stream in which air from a compressor is directed into a casing and onto a conically converging member disposed in a protective sleeve, the impingement effecting separation. The air then passes through a zig-zag shaped tube extending from the sleeve bottom and impinges on an L-shaped plate to effect more separation. The liquid accumulates in the bottom of the casing to which a transparent tube is connected for indicating the liquid level. The separated air passes to the casing outlet via a round tube having a screw rod therein to provide final separation.