Abstract: This application is directed to a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber; forming GaN crystal nuclei containing In atoms on the sapphire substrate; growing at least one composite layer on the GaN crystal nuclei, the GaN crystal nuclei growing to form a buffer layer, each composite layer comprising an InGaN sublayer and a GaN sublayer; and successively growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, the active layer comprising alternately stacked InGaN quantum wells and GaN quantum barriers. Large and stable GaN crystal nuclei are formed to effectively counteract stress generated by lattice mismatch between the sapphire substrate and a GaN-based material.

Abstract: The present disclosure belongs to the technical field of semiconductors, and provides a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber, and forming a plurality of GaN crystal nuclei containing In atoms on the surface of the sapphire substrate; growing at least one composite layer on the GaN crystal nuclei, the GaN crystal nuclei growing to form a buffer layer, and each composite layer comprising an InGaN sublayer and a GaN sublayer that is grown on the InGaN sublayer; and successively growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, the active layer comprising alternately stacked InGaN quantum wells and GaN quantum barriers.