Abstract: Hydrogen sulfide (H2S) and/or mercaptan scavengers are chemicals that remove H2S and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R1, R2, R3, and R4 are the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as H2S scavengers.

Abstract: Hydrogen sulfide (H2S) and/or mercaptan scavengers are chemicals that remove H2S and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R1, R2, R3, and R4 are the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as H2S scavengers.

Abstract: A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: Hydrogen sulfide (H2S) and/or mercaptan scavengers are chemicals that remove H2S and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R1, R2, R3, and R4 are the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as H2S scavengers.

Abstract: Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.

Abstract: A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.

Abstract: Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a silicon oxide layer overlying the semiconductor substrate, forming a metal oxide gate capping layer overlying the silicon oxide layer, depositing a first metal gate electrode layer overlying the metal oxide gate capping layer, and removing a portion of the first metal gate electrode layer and the metal oxide gate capping layer to form a gate stack.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.