Patents by Inventor Ying Hoi LAI

Ying Hoi LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming the same
    Patent number: 10872996
    Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: December 22, 2020
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Qinglin He, Ying Hoi Lai, Yi Liu, Iam Keong Sou
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20190165199
    Abstract: A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.
    Type: Application
    Filed: February 1, 2019
    Publication date: May 30, 2019
    Applicant: The Hong Kong University of Science and Technology
    Inventors: Qinglin He, Ying Hoi Lai, Yi Liu, Iam Keong Sou
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20180198015
    Abstract: A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.
    Type: Application
    Filed: July 6, 2016
    Publication date: July 12, 2018
    Applicant: The Hong Kong University of Science and Technology
    Inventors: Qinglin He, Ying Hoi Lai, Yi Liu, Iam Keong Sou
  • MgS solar-blind UV radiation detector
    Patent number: 8592935
    Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: November 26, 2013
    Assignees: The Hong Kong University of Science and Technology, University of Macau
    Inventors: Iam Keong Sou, Ying Hoi Lai, Shu Kin Lok, Wai Yip Cheung, George Ke Lun Wong, Kam Weng Tam, Sut Kam Ho
  • MgS Solar-Blind UV Radiation Detector
    Publication number: 20120306042
    Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.
    Type: Application
    Filed: June 5, 2012
    Publication date: December 6, 2012
    Applicant: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Iam Keong SOU, Ying Hoi LAI, Shu Kin LOK, Wai Yip CHEUNG, George Ke Lun WONG, Kam Weng TAM, Sut Kam HO