Patents by Inventor Ying Hong

Ying Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145630
    Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.
    Type: Application
    Filed: October 31, 2023
    Publication date: May 2, 2024
    Inventors: Minyou HE, Xiaoliang LIU, Qing WANG, Ling-Yuan HONG, Chung-Ying CHANG
  • Patent number: 11968904
    Abstract: The present invention provides a flexible piezoelectric composite including a three-dimensional interconnected piezoelectric ceramic framework based on a porous organic template with sufficient stiffness and infiltrated with a flexible polymer matrix. A method for fabricating the flexible piezoelectric composition is also described herein.
    Type: Grant
    Filed: July 5, 2021
    Date of Patent: April 23, 2024
    Assignee: City University of Hong Kong
    Inventors: Zhengbao Yang, Ying Hong
  • Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20230355480
    Abstract: The present disclosure discloses an anti-colic baby bottle, including a bottle body and a nipple mounted in the bottle body through a threaded fixing ring; the nipple is provided with a thickened portion; an anti-colic separation sheet is arranged between the bottle body and the nipple; an air inlet is formed in the thickened portion of the nipple; the anti-colic separation sheet is connected with an air guide pipe which correspondingly adapts to the air inlet and extends into the bottle body; the air guide pipe and a sucking end of the nipple are symmetrically arranged on two sides of the bottle body in a radial direction.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 9, 2023
    Inventor: Ying Hong
  • Publication number: 20230292617
    Abstract: The present invention provides a surface tension assisted film forming method to prepare a flexible, patterned piezoceramic composite for use in a variety of electronics. The present method allows tuning mechanical and piezoelectric properties of the resulting composite by simply adjusting one or few parameters used during the piezoceramic film forming and/or composite forming procedures in the absence of any complex transferring techniques that are commonly used in conventional methods. The present invention also allows customizing patterns (two-dimensional or three-dimensional) on the piezoceramic framework to result in a piezoelectric composite that is able to provide anisotropic piezoelectric responses to different loads whilst still having a constant electrical output over a long-time deformation.
    Type: Application
    Filed: March 8, 2022
    Publication date: September 14, 2023
    Inventors: Zhengbao YANG, Ying HONG
  • Patent number: 11699588
    Abstract: A vertical nanowire semiconductor device manufactured by a method of manufacturing a vertical nanowire semiconductor device is provided. The vertical nanowire semiconductor device includes a substrate, a first conductive layer in a source or drain area formed above the substrate, a semiconductor nanowire of a channel area vertically upright with respect to the substrate on the first conductive layer, wherein a crystal structure thereof is grown in <111> orientation, a second conductive layer of a drain or source area provided on the top of the semiconductor nanowire, a metal layer on the second conductive layer, a NiSi2 contact layer between the second conductive layer and the metal layer, a gate surrounding the channel area of the vertical nanowire, and a gate insulating layer located between the channel area and the gate.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: July 11, 2023
    Inventor: Ying Hong
  • Patent number: 11694322
    Abstract: Methods and systems for milling and imaging a sample based on multiple fiducials at different sample depths include forming a first fiducial on a first sample surface at a first sample depth; milling at least a portion of the sample surface to expose a second sample surface at a second sample depth; forming a second fiducial on the second sample surface; and milling at least a portion of the second sample surface to expose a third sample surface including a region of interest (ROI) at a third sample depth. The location of the ROI at the third sample depth relative to the first fiducial may be calculated based on an image of the ROI and the second fiducial as well as relative position between the first fiducial and the second fiducial.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: July 4, 2023
    Assignee: FEI Company
    Inventors: Zhenxin Zhong, Hai Fe Gao, Ying Hong Lin, Ruixin Zhang, Bingxing Wu
  • Patent number: 11631751
    Abstract: A method of manufacturing a semiconductor device includes steps of (i) forming a buffer layer of an insulating material on a substrate, (ii) forming a seed layer of catalyst material containing Ni on the buffer layer, (iii) forming, on the buffer layer, an amorphous intrinsic silicon layer for forming a channel, (iv) forming, on the amorphous intrinsic silicon layer, a non-intrinsic silicon layer for forming a source and/or drain, (v) forming a metal layer on the non-intrinsic silicon layer, and (vi) performing metal induced crystallization (MIC) process for crystallization of the amorphous intrinsic silicon layer and the amorphous non-intrinsic silicon layer, and activation of the amorphous non-intrinsic silicon layer to form a conductive area.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: April 18, 2023
    Inventor: Ying Hong
  • Patent number: 11631752
    Abstract: A semiconductor device include a substrate, a buffer layer formed on the substrate, a channel layer formed by an intrinsic polycrystalline silicon layer on the buffer layer, polycrystalline source and drain by non-intrinsic silicon formed on both sides of the polycrystalline silicon layer, a source electrode and a drain electrode formed on the polycrystalline source and the drain, a gate electrode corresponding to the channel layer, and an NiSi2 contact layer located between the source and the source electrode and between the drain and the drain electrode.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: April 18, 2023
    Inventor: Ying Hong
  • Patent number: 11628450
    Abstract: A tramp metal removing device has a primary housing to define a product flow path for being passed by a stream of raw materials and a moving path. A secondary housing is connected to the primary housing. A plurality of drawer units are sequentially stacked on the primary housing and secondary housing. Each drawer unit has a frame, a plurality of magnetic members and a scraping assembly. The frame is coupled with the primary and secondary housings in a movable way. Each of magnetic members is secured on the frame and has a magnetic section and a non-magnetic section. The scraping assembly is coupled with the frame in a way that it is only moveable in the secondary housing for removing tramp metals of a stream of raw materials in a two-stage manner.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: April 18, 2023
    Assignee: TAI HAN EQUIPMENT ENTERPRISE CO., LTD.
    Inventors: Shyh-Yi Wey, Wen-Cheng Chang, Kuen Ting Hsieh, Ken-Der Lin, Bao-Ding Li, Rong-Huei Wang, Jia-Ying Hong, Fu-Chen Wang, Ho-Chi Kang
  • Patent number: 11594414
    Abstract: A method of manufacturing a semiconductor nanowire semiconductor device is described. The method includes forming an amorphous channel material layer on a substrate, patterning the channel material layer to form semiconductor nanowires extending in a lateral direction on the substrate, and forming a cover layer covering an upper of the semiconductor nanowire. The cover layer and the nanowire are patterned to form a trench exposing a side section of an one end of the semiconductor nanowire and a catalyst material layer is formed in contact with a side surface of the semiconductor nanowire, and metal induced crystallization (MIC) by heat treatment is performed to crystallize the semiconductor nanowire in a length direction of the nanowire from the one end of the semiconductor nanowire in contact with the catalyst material.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: February 28, 2023
    Inventor: Ying Hong
  • Publication number: 20220349852
    Abstract: An electrode-modified heavy metal ion microfluidic detection chip, comprising a microfluidic module (1) and a three-electrode sensor (2), wherein the microfluidic module (1) is integrally molded by 3D printing, and the interior thereof has a microchannel (10) and a sensor slot (11); and the three-electrode sensor (2) comprises three electrodes (21, 22, 23) printed on a card-shaped bottom plate (20), among which the working electrode (21) is a porous nano-NiMn2O4 modified bare carbon electrode, and the three-electrode sensor (2) is inserted into the sensor slot (11) that matches same to form the microfluidic detection chip.
    Type: Application
    Filed: March 27, 2020
    Publication date: November 3, 2022
    Inventors: YING HONG, Jiansong CHEN, Juan HUANG, Yangyun WU, Lingling TIAN, Wei WANG, Wei AN, Jingling WANG, Yuanyuan ZHU, Chen TANG
  • Publication number: 20220323656
    Abstract: The present disclosure provides a portable breast pump. The existing technical problems are solved. The portable breast pump includes a pump seat; the pump seat is hollowed, and a milk collection cavity is formed in the middle; a liquid inlet hole communicated with the milk collection cavity is formed in one side of the pump seat in a vertical direction; and a bottom side of the pump seat is provided with a planar bottom surface for placement or a bottom surface for placement sunken towards the milk collection cavity. The present disclosure has the advantages of convenience in carrying and placement, and the like.
    Type: Application
    Filed: June 28, 2022
    Publication date: October 13, 2022
    Inventor: Ying Hong
  • Publication number: 20220291000
    Abstract: A method of manufacturing a semiconductor nanowire semiconductor device is described. The method includes forming an amorphous channel material layer on a substrate, patterning the channel material layer to form semiconductor nanowires extending in a lateral direction on the substrate, and forming a cover layer covering an upper of the semiconductor nanowire. The cover layer and the nanowire are patterned to form a trench exposing a side section of an one end of the semiconductor nanowire and a catalyst material layer is formed in contact with a side surface of the semiconductor nanowire, and metal induced crystallization (MIC) by heat treatment is performed to crystallize the semiconductor nanowire in a length direction of the nanowire from the one end of the semiconductor nanowire in contact with the catalyst material.
    Type: Application
    Filed: September 30, 2021
    Publication date: September 15, 2022
    Inventor: Ying HONG
  • Patent number: 11428739
    Abstract: A device for rapidly detecting energy efficiency of a permanent magnet synchronous motor includes a test platform, an energy circulation device, and a data synchronous acquisition module, the test platform being fixedly connected to support legs via threads, an upper end surface of the test platform being provided with baffles to define a motor mounting tank, a bolt hole being provided in a surface of an outer baffle of the motor mounting tank, the energy circulation device being mounted on a fixed baffle on one end of the motor mounting tank, a second intelligent power analyzer, a first intelligent power analyzer, and a temperature inspection instrument being sequentially mounted on an upper surface of a tail end on a right side of the test platform, and the data synchronous acquisition module being provided on one end of an inner wall of the motor mounting tank.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: August 30, 2022
    Assignee: JINLING HAIGUAN TECHNICAL CENTER
    Inventors: Ying Hong, Wei An, Jiadan Wei, Yangyun Wu, Junwei Xu, Ling Gao, Ke Chen, Jinling Wang, Chen Tang, Jiansong Chen
  • Publication number: 20220252669
    Abstract: A device for rapidly detecting energy efficiency of a permanent magnet synchronous motor includes a test platform, an energy circulation device, and a data synchronous acquisition module, the test platform being fixedly connected to support legs via threads, an upper end surface of the test platform being provided with baffles to define a motor mounting tank, a bolt hole being provided in a surface of an outer baffle of the motor mounting tank, the energy circulation device being mounted on a fixed baffle on one end of the motor mounting tank, a second intelligent power analyzer, a first intelligent power analyzer, and a temperature inspection instrument being sequentially mounted on an upper surface of a tail end on a right side of the test platform, and the data synchronous acquisition module being provided on one end of an inner wall of the motor mounting tank.
    Type: Application
    Filed: December 14, 2021
    Publication date: August 11, 2022
    Inventors: YING HONG, WEI AN, JIADAN WEI, YANGYUN WU, JUNWEI XU, LING GAO, KE CHEN, JINLING WANG, CHEN TANG, JIANSONG CHEN
  • Patent number: D981464
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: March 21, 2023
    Assignee: PEGAVISION CORPORATION
    Inventor: Ying-Hong Lu
  • Patent number: D982641
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: April 4, 2023
    Assignee: PEGAVISION CORPORATION
    Inventor: Ying-Hong Lu
  • Patent number: D1004072
    Type: Grant
    Filed: January 20, 2022
    Date of Patent: November 7, 2023
    Inventor: Ying Hong
  • Patent number: D1009250
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: December 26, 2023
    Inventor: Ying Hong