Abstract: A level shifter is provided. The level shifter includes a first input transistor, a second input transistor, a first bias transistor, a second bias transistor, a first switch transistor and a second switch transistor. At the time of change of the signal status, by raising the potential of the body terminal of the first input transistor, the threshold voltage is reduced so that the current flowing through the second input transistor is increased to shorten the time of the change of the signal status.

Abstract: The present invention reduces the number of level shifters to obtain smaller layout area while remaining the original function of gate circuit, where a signal from a shift register is transferred to a level shifter for voltage shifting and afterward is transferred to a proper buffer through a selector.

Abstract: A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.

Abstract: A testing circuit and a testing method for a flat panel display. The testing circuit is provided to each input terminal of data lines of a data driving circuit, which is integrated into the flat panel display. The testing circuit is for testing performance of a pixel as well as performance of the data driving circuit in the flat panel display.

Abstract: A level shifter is provided. The level shifter includes a first input transistor, a second input transistor, a first bias transistor, a second bias transistor, a first switch transistor and a second switch transistor. At the time of change of the signal status, by raising the potential of the body terminal of the first input transistor, the threshold voltage is reduced so that the current flowing through the second input transistor is increased to shorten the time of the change of the signal status.

Abstract: A voltage level transferring circuit is provided for transferring an input signal oscillating between a high original voltage level and a low original voltage level in a signal input terminal to a target signal oscillating between a high target voltage level and a low target voltage level in a signal output terminal. The circuit includes a voltage pull-up set including a plurality of transistor switches to pull up the voltage from the high original voltage level to the high target voltage level, and a voltage pull-down set including a plurality of transistor switches to pull down the voltage from the low original voltage level to the low target voltage level.

Abstract: A source follower capable of compensating the threshold voltage is provided. The source follower comprises a current source, a switching circuit, and a thin film transistor. The source follower makes the threshold voltage of the thin film transistor constant by using the current source, and makes the input voltage nearly equal to the output voltage by using the storage capacitor and the compensating capacitor. Thus, it can make the error of the output voltage fall in the error range of the gray level voltage.

Abstract: A testing circuit and a testing method for a flat panel display. The testing circuit is provided to each input terminal of data lines of a data driving circuit, which is integrated into the flat panel display. The testing circuit is for testing performance of a pixel as well as performance of the data driving circuit in the flat panel display.

Abstract: A source follower capable of compensating the threshold voltage is provided. The source follower comprises a current source, a switching circuit, and a thin film transistor. The source follower makes the threshold voltage of the thin film transistor constant by using the current source, and makes the input voltage nearly equal to the output voltage by using the storage capacitor and the compensating capacitor. Thus, it can make the error of the output voltage fall in the error range of the gray level voltage.

Abstract: A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.