Patents by Inventor Ying-Hsueh CHANG CHIEN
Ying-Hsueh CHANG CHIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11264321Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.Type: GrantFiled: November 1, 2019Date of Patent: March 1, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
-
Publication number: 20200066633Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
-
Patent number: 10512946Abstract: The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.Type: GrantFiled: September 3, 2015Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
-
Patent number: 10510655Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.Type: GrantFiled: September 18, 2014Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
-
Patent number: 10507498Abstract: The present disclosure provides a particle cleaning apparatus. The apparatus comprises an acoustic wave generator configured to apply an acoustic wave to particles external to the acoustic wave generator. The apparatus also includes a removing module configured to remove the applied particles.Type: GrantFiled: June 15, 2016Date of Patent: December 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ying-Hsueh Chang Chien, James Jeng-Jyi Hwang, Chi-Ming Yang
-
Patent number: 10020209Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.Type: GrantFiled: May 23, 2016Date of Patent: July 10, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
-
Publication number: 20170361361Abstract: The present disclosure provides a particle cleaning apparatus. The apparatus comprises an acoustic wave generator configured to apply an acoustic wave to particles external to the acoustic wave generator. The apparatus also includes a removing module configured to remove the applied particles.Type: ApplicationFiled: June 15, 2016Publication date: December 21, 2017Inventors: YING-HSUEH CHANG CHIEN, JAMES JENG-JYI HWANG, CHI-MING YANG
-
Patent number: 9764364Abstract: A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom opening.Type: GrantFiled: December 23, 2014Date of Patent: September 19, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Chin-Hsiang Lin, Chi-Ming Yang, Ming-Hsi Yeh, Shao-Yen Ku
-
Publication number: 20170066021Abstract: The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.Type: ApplicationFiled: September 3, 2015Publication date: March 9, 2017Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
-
Patent number: 9564509Abstract: A method of fabricating an integrated circuit device includes forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate. The method includes forming a protective layer overlying the first and the second gate structures. The method includes removing a portion of the protective layer over the second gate structure. The method includes forming features adjacent to the second gate structure. The method further includes forming a spacer over at least a portion of the features adjacent to the second gate structure, wherein the features separate the spacer from the substrate adjacent to the second gate structure. The method includes removing the second portion of the protective layer. Removing the second portion of the protective layer includes forming a protector over the second gate structure; and performing an etching process using a chemical comprising hydrofluoric acid (HF).Type: GrantFiled: November 25, 2014Date of Patent: February 7, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Hsi Yeh, Hsien-Hsin Lin, Ying-Hsueh Chang Chien, Yi-Fang Pai, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20160268147Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.Type: ApplicationFiled: May 23, 2016Publication date: September 15, 2016Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
-
Patent number: 9349623Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.Type: GrantFiled: January 31, 2014Date of Patent: May 24, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
-
Patent number: 9299593Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.Type: GrantFiled: August 16, 2011Date of Patent: March 29, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Hsi Yeh, Kuo-Sheng Chuang, Ying-Hsueh Chang Chien, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20150118807Abstract: A method of fabricating an integrated circuit device includes forming a first gate structure in a first region of a substrate and a second gate structure in a second region of the substrate. The method includes forming a protective layer overlying the first and the second gate structures. The method includes removing a portion of the protective layer over the second gate structure. The method includes forming features adjacent to the second gate structure. The method further includes forming a spacer over at least a portion of the features adjacent to the second gate structure, wherein the features separate the spacer from the substrate adjacent to the second gate structure. The method includes removing the second portion of the protective layer. Removing the second portion of the protective layer includes forming a protector over the second gate structure; and performing an etching process using a chemical comprising hydrofluoric acid (HF).Type: ApplicationFiled: November 25, 2014Publication date: April 30, 2015Inventors: Ming-Hsi YEH, Hsien-Hsin LIN, Ying-Hsueh CHANG CHIEN, Yi-Fang PAI, Chi-Ming YANG, Chin-Hsiang LIN
-
Publication number: 20150107634Abstract: A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom openingType: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Inventors: Ying-Hsueh Chang Chien, Chin-Hsiang Lin, Chi-Ming Yang, Ming-Hsi Yeh, Shao-Yen Ku
-
Patent number: 8926762Abstract: Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.Type: GrantFiled: September 6, 2011Date of Patent: January 6, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Shao-Yen Ku, Ming-Hsi Yeh, Chi-Ming Yang, Chin-Hsiang Lin
-
Publication number: 20150001723Abstract: A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.Type: ApplicationFiled: September 18, 2014Publication date: January 1, 2015Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
-
Patent number: 8921177Abstract: A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.Type: GrantFiled: July 22, 2011Date of Patent: December 30, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Hsi Yeh, Hsien-Hsin Lin, Ying-Hsueh Chang Chien, Yi-Fang Pai, Chi-Ming Yang, Chin-Hsiang Lin
-
Patent number: 8871639Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.Type: GrantFiled: January 4, 2013Date of Patent: October 28, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
-
Publication number: 20140273302Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.Type: ApplicationFiled: January 31, 2014Publication date: September 18, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang