Patents by Inventor Ying Hui

Ying Hui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140025964
    Abstract: The present invention belongs to the field of mobile communications technologies and specifically discloses a mobile terminal encryption method, a hardware encryption device, and a mobile terminal, aiming to prevent a hacker from easily acquiring or tampering key data in the mobile terminal and protect the interests of a terminal manufacturer. The method in embodiments includes: performing, according to stored authentication data., authentication between the hardware encryption device and a main control chip of the mobile terminal, where the hardware encryption device stores encryption data and the authentication data; if the authentication succeeds, permitting, by the hardware encryption device, the main control chip to load the encryption data; and if the authentication fails, prohibiting, by the hardware encryption device, the main control chip from loading the encryption data.
    Type: Application
    Filed: September 27, 2013
    Publication date: January 23, 2014
    Applicant: HUAWEI DEVICE CO., LTD.
    Inventors: Ying HUI, Yongquan He
  • Publication number: 20050205414
    Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.
    Type: Application
    Filed: May 16, 2005
    Publication date: September 22, 2005
    Inventors: Kenny Ngan, Ying Hui, Seshadri Ramaswami