Abstract: A laser device is fabricated to obtain optical modes adjustable. A first distributed Bragg reflector (DBR), a light-emitting layer, a second DBR, and a third DBR are sequentially grown on a substrate through deposition, sputtering, or epitaxy. The third DBR comprises at least one dielectric layer. An aperture is selectively formed at center of the third DBR through etching. On using, the present invention practices the aperture at the dielectric layer on top of the laser device. The optical modes generated is adjustable by controlling the diameter of the aperture or the number of layers contained in the dielectric layer. The divergence angle is decreased to less than 15 degrees, so that the far-field emission has uniform intensity distribution and the emission distance is increased in optical fiber. Thus, a rational structure design, a simple assembly, and a low-cost high-volume manufacture are obtained for mass production.

Abstract: A new vertical-cavity surface-emitting laser (VCESL) is provided. With an undercut structure and a diffusion structure, the VCESL obtains a controllable number of optical modes for a distributed Bragg reflector (DBR). Thus, an electrical-to-optical bandwidth and a bit-rate transmission distance in OM4 fiber reach their biggest values. Besides, a biggest D-coefficient (˜13.5 GHz/mA1/2), a smallest energy-data rate under 34 Gbit/s (EDR:140 fJ/bit) and a smallest energy-data distance rate under 25 Gbit/s with 0.8 km of OM4 fiber (EDDR:175.5 fJ/bit·km) are obtained.

Abstract: The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively.

Abstract: The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively.

Abstract: The invention provides electromagnetic wave absorption components and device. The electromagnetic wave absorption component includes an electromagnetic shield constituted by at least one material selected from the group consisting of a carbon nanocoil and a carbon fiber, and a solidified layer formed of a mixture of a solidifiable material and the electromagnetic shield after solidification. Another embodiment of the electromagnetic wave absorption component includes an electromagnetic shield constituted by at least one material selected from the group consisting of a carbon nanocoil and a carbon fiber, and a solidified layer, formed by solidifying a solidifiable material, applicable to encapsulating the electromagnetic shield. Further, the electromagnetic wave absorption device is formed by stacking at least two of the above-mentioned electromagnetic wave absorption components.

Abstract: A vertical-cavity surface-emitting laser structure is provided. The device comprises a structure which consists of: a substrate; a multi-layered structure stacked over the substrate, which consists of a bottom distributed Bragg reflector, a bottom cladding or spacer layer, a light-emitting active layer, a top cladding or spacer layer, a top distributed Bragg reflector (DBR). An annular disordered region (or disordered absorber) with an aperture is formed in a part of top or bottom DBR for transverse modes control; an active region aligned with the aperture of the annular disordered region is formed on the light-emitting active layer; and a p-electrode and an n-electrode are formed on a p-type and an n-type layers respectively. The device structure is to provide a vertical-cavity surface-emitting laser that can operate in a stable single-mode with a sufficient output power and high yield production.

Abstract: A vertical-cavity surface-emitting laser structure and a method for fabricating the same are provided. The device comprises a structure which consists of: a substrate; a multi-layered structure stacked over the substrate, which consists of a bottom distributed Bragg reflector, a bottom cladding or spacer layer, a light-emitting active layer, a top cladding or spacer layer, a top distributed Bragg reflector (DBR). The method for fabricating the device involves: forming an absorber with an aperture in a part of the multi-layered structure; forming an active region with its center aligned with the absorber aperture on the light-emitting active layer; and forming a p-electrode and an n-electrode on a p-type and an n-type layers respectively. The device structure and fabrication method is to provide a vertical-cavity surface-emitting laser that can operate in a stable single-mode with a sufficient output power and high yield production.

Abstract: A structure of an ink-jet printer head of a piezoelectric type comprising a deformable polymer membrane, an actuator and an ink tank is provided. The deformable polymer membrane covers the top opening of the ink tank to enclose the ink tank. The actuator, which is a double-layer piezoelectric ceramic plate, is mounted on the deformable polymer membrane with one end thereof being fixedly connected to the polymer membrane and the other end thereof being free to vibrate. As a double-layer piezoelectric ceramic plate is employed as the actuator, it includes a top and a bottom piezoelectric layers. A predetermined voltage signal is applied selectively across the upper-surface electrode and the lower-surface electrode of the top and bottom piezoelectric layer respectively such that the top piezoelectric layer extends and the bottom layer shortens selectively.