Abstract: A semiconductor device including a substrate, a first doped region, a second doped region, a gate, and a gate dielectric layer is provided. The substrate has a first conductive type. The first doped region is formed in the substrate and has a second conductive type. The second doped region is formed in the substrate and has the second conductive type. The gate is formed on the substrate and is disposed between the first and second doped regions. The gate dielectric layer is formed on the substrate and is disposed between the gate and the substrate. The gate dielectric layer includes a first region and a second region. The depth of the first region is different from the depth of the second region.

Abstract: A semiconductor device and a method for forming the same are provided. The method includes forming a patterned mask on a substrate, wherein the patterned mask includes a pad oxide layer and a silicon nitride layer over the pad oxide layer. The method also includes forming a trench in the substrate by performing a first etching process on the substrate through an opening of the patterned mask and forming a dielectric material layer in the trench, in the opening, and on the patterned mask. The method further includes performing a planarization process to remove the dielectric material layer outside of the trench, and performing a heat treatment process to form an oxidized portion at the interface of the pad oxide layer and the substrate and adjacent to the dielectric material layer.

Abstract: A semiconductor device including a substrate, a first doped region, a second doped region, a gate, and a gate dielectric layer is provided. The substrate has a first conductive type. The first doped region is formed in the substrate and has a second conductive type. The second doped region is formed in the substrate and has the second conductive type. The gate is formed on the substrate and is disposed between the first and second doped regions. The gate dielectric layer is formed on the substrate and is disposed between the gate and the substrate. The gate dielectric layer includes a first region and a second region. The depth of the first region is different from the depth of the second region.

Abstract: A semiconductor device and a method for forming the same are provided. The method includes forming a patterned mask on a substrate, wherein the patterned mask includes a pad oxide layer and a silicon nitride layer over the pad oxide layer. The method also includes forming a trench in the substrate by performing a first etching process on the substrate through an opening of the patterned mask and forming a dielectric material layer in the trench, in the opening, and on the patterned mask. The method further includes performing a planarization process to remove the dielectric material layer outside of the trench, and performing a heat treatment process to form an oxidized portion at the interface of the pad oxide layer and the substrate and adjacent to the dielectric material layer.