Patents by Inventor Ying-Ko Chin

Ying-Ko Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8426922
    Abstract: A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad structure disposed over the N-well region. The pad structure further includes: a pad body disposed on the insulation layer; and at least one contact plug penetrating through the insulation layer, having one end coupled to the pad body and the other end coupled to a contact zone in the N-well region; wherein the contact zone is interfaced with the N-well region with P-type dopants.
    Type: Grant
    Filed: October 15, 2010
    Date of Patent: April 23, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Fang-Mei Chao, Ming-I Chen, Ying-Ko Chin, Yi-Chiao Wang
  • Publication number: 20120091536
    Abstract: A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad structure disposed over the N-well region. The pad structure further includes: a pad body disposed on the insulation layer; and at least one contact plug penetrating through the insulation layer, having one end coupled to the pad body and the other end coupled to a contact zone in the N-well region; wherein the contact zone is interfaced with the N-well region with P-type dopants.
    Type: Application
    Filed: October 15, 2010
    Publication date: April 19, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Fang-Mei CHAO, Ming-I Chen, Ying-Ko Chin, Yi-Chiao Wang