Patents by Inventor Ying LAN

Ying LAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070048181
    Abstract: An electronic system and method for detecting analytes, such as carbon dioxide, is provided, using an improved nanostructure sensor (CO2 sensor). The CO2 sensor may comprise a substrate and a nanostructure, such as a one or more carbon nanotubes disposed over the substrate (e.g., as a network). One or more conductive elements may electrically communicate with the nanostructure. A counter or gate electrode may be positioned adjacent the nanostructure. A functionalization material reactive with carbon dioxide may be included, either disposed in contact with the nanostructure or isolated by a dielectric. The sensor may be connected to a circuit responsive to changes in CO2 concentration in the environment. Embodiments are described of medical sensing systems including one or more CO2 sensors. One embodiment comprises a breath sampling cannula which is connected to a sensor unit.
    Type: Application
    Filed: July 18, 2006
    Publication date: March 1, 2007
    Inventors: Daniel Chang, Ying-Lan Chang, Jean-Christophe Gabriel, Vikram Joshi, William Mickelson, Joseph Niemann, John Passmore, Alexander Star, Christian Valcke
  • Patent number: 7123638
    Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: October 17, 2006
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Michael Howard Leary, Danny E. Mars, Sungwon David Roh, Danielle R. Chamberlin, Ying-Lan Chang
  • Publication number: 20060188934
    Abstract: A high-sensitivity sensor with improved stability includes nanostructure-based sensors that are arranged such that a first nanostructure-based sensor (“shielded sensor”) is shielded from potential exposure to an environmental factor of interest and a second nanostructure-based sensor (“exposed sensor”) is allowed potential exposure to an environmental factor of interest. Further, all of the nanostructure-based sensors are arranged to allow common exposure to environmental factors not of interest. Thus, relative changes in properties, such as electrical resistance, of the shielded nanostructure-based sensor versus changes in properties of the exposed nanostructure-based sensor are used for detecting an environmental factor of interest.
    Type: Application
    Filed: February 22, 2005
    Publication date: August 24, 2006
    Inventors: Ying-Lan Chang, Michael Tan
  • Publication number: 20060180755
    Abstract: A sample support for a mass spectrometry system is described. The sample support comprises a substrate and a set of carbon nanotube regions adjacent to the substrate and configured to promote ionization of a sample on the sample support.
    Type: Application
    Filed: February 15, 2005
    Publication date: August 17, 2006
    Inventors: Ying-Lan Chang, Dan-Hui Yang, ChaoKun Lin, Jean Truche, Jian Bai
  • Publication number: 20060118712
    Abstract: A sample support for ionizing a sample is described. The sample support comprises a reflective nanostructure material for reflecting incident light to ionize the sample on the sample support.
    Type: Application
    Filed: December 3, 2004
    Publication date: June 8, 2006
    Inventors: Dan-Hui Yang, Ying-Lan Chang, Timothy Joyce
  • Patent number: 7034331
    Abstract: The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
    Type: Grant
    Filed: June 4, 2004
    Date of Patent: April 25, 2006
    Assignee: Agilent Technologies, Inc.
    Inventors: Ying-Lan Chang, Ashish Tandon, Michael H. Leary, Michael R. T. Tan
  • Patent number: 7033938
    Abstract: The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 ?m is deposited over the substrate wafer.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: April 25, 2006
    Inventors: David P. Bour, Tetsuya Takeuchi, Ashish Tandon, Ying-Lan Chang, Michael R. T. Tan, Scott W. Corzine
  • Publication number: 20060065827
    Abstract: The invention provides an apparatus that produces analyte ions for detection by a detector. The apparatus includes a matrix based ion source having a target substrate including a carbon nanotube material for producing analyte ions, an ion transport system adjacent to the matrix based ion source for transporting analyte ions from the matrix based ion source; and an ion detector downstream from the ion transport system for detecting the analyte ions. The invention also provides a method for producing and detecting the analyte ions.
    Type: Application
    Filed: September 24, 2004
    Publication date: March 30, 2006
    Inventors: Dan-Hui Yang, Jennifer Lu, Ying-Lan Chang, Timothy Joyce
  • Patent number: 7016392
    Abstract: The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: March 21, 2006
    Inventors: Ashish Tandon, Michael H. Leary, Ying-Lan Chang
  • Publication number: 20060007974
    Abstract: The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.
    Type: Application
    Filed: July 6, 2004
    Publication date: January 12, 2006
    Inventors: Ashish Tandon, Michael Tan, Ying-Lan Chang
  • Publication number: 20050184303
    Abstract: A strain compensating structure comprises a strain compensating layer adjacent an oxide-forming layer. The strain compensating layer compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer.
    Type: Application
    Filed: February 25, 2004
    Publication date: August 25, 2005
    Inventors: Ashish Tandon, Michael Leary, Michael Tan, Ying-Lan Chang
  • Patent number: 6931044
    Abstract: A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: August 16, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: David P. Bour, Michael R. T. Tan, Ying-Lan Chang
  • Publication number: 20050083979
    Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
    Type: Application
    Filed: October 17, 2003
    Publication date: April 21, 2005
    Inventors: Michael Leary, Danny Mars, Sungwon Roh, Danielle Chamberlin, Ying-Lan Chang
  • Patent number: 6878970
    Abstract: Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: April 12, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: David P. Bour, Michael H. Leary, Ying-Lan Chang, Yoon-Kyu Song, Michael R. T. Tan, Tetsuya Takeuchi, Danielle Chamberlin
  • Patent number: 6878959
    Abstract: The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: April 12, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: David P. Bour, Ying-Lan Chang, Tetsuya Takeuchi, Danny E. Mars
  • Patent number: 6876686
    Abstract: A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P—P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: April 5, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: Ashish Tandon, Ying-Lan Chang
  • Publication number: 20040218655
    Abstract: The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.
    Type: Application
    Filed: April 30, 2003
    Publication date: November 4, 2004
    Inventors: Ashish Tandon, Michael H. Leary, Ying-Lan Chang
  • Publication number: 20040219703
    Abstract: The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III-V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 &mgr;m is deposited over the substrate wafer.
    Type: Application
    Filed: February 23, 2004
    Publication date: November 4, 2004
    Inventors: David P. Bour, Tetsuya Takeuchi, Ashish Tandon, Ying-Lan Chang, Michael R. T. Tan, Scott W. Corzine
  • Publication number: 20040217343
    Abstract: The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
    Type: Application
    Filed: June 4, 2004
    Publication date: November 4, 2004
    Inventors: Ying-Lan Chang, Ashish Tandon, Michael H. Leary, Michael R. T. Tan
  • Patent number: 6813295
    Abstract: Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: November 2, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Tetsuya Takeuchi, Ying-Lan Chang, David P. Bour, Michael H. Leary, Michael R. T. Tan