Abstract: A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.

Abstract: In a method of manufacturing a semiconductor device, a fin structure including a lower fin structure and an upper fin structure disposed over the lower fin structure is formed, wherein the upper fin structure includes dielectric layers and multi-film layers alternately stacked, each of the multi-film layers includes a channel layer, a first protection layer and a second protection layer, and the channel layer is between the first protection layer and the second protection layer. A sacrificial gate structure is formed over the upper fin structure. A source/drain epitaxial layer is formed over a source/drain region of the fin structure after forming the sacrificial gate structure over the upper fin structure. The sacrificial gate structure is removed after forming the source/drain epitaxial layer. The dielectric layers are removed after removing the sacrificial gate structure. A gate structure is formed around the multi-film layers.

Abstract: The chip includes a device region at a substrate, a corner region at a corner of the substrate, a seal ring surrounding the device region and including a corner section adjacent the corner region, a scribe line region surrounding the seal ring and the corner region, and an alignment key disposed neighboring the seal ring. A package structure including the chip having alignment key is also disclosed.

Abstract: A three-dimensional (3D) scene is generated from non-aligned generic camera priors by producing a tri-plane representation for an input scene received in random latent code, obtaining a camera posterior including posterior parameters representing color and density data from the random latent code and from generic camera priors without alignment assumptions, and volumetrically rendering an image of the input scene from the color and density data to provide a scene having pixel colors and depth values from an arbitrary camera viewpoint. A depth adaptor processes depth values to generate an adapted depth map that bridges domains of rendered and estimated depth maps for the image of the input scene. The adapted depth map, color data, and scene geometry information from an external dataset are provided to a discriminator for selection of a 3D representation of the input scene.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.

Abstract: A multimodal video generation framework (MMVID) that benefits from text and images provided jointly or separately as input. Quantized representations of videos are utilized with a bidirectional transformer with multiple modalities as inputs to predict a discrete video representation. A new video token trained with self-learning and an improved mask-prediction algorithm for sampling video tokens is used to improve video quality and consistency. Text augmentation is utilized to improve the robustness of the textual representation and diversity of generated videos. The framework incorporates various visual modalities, such as segmentation masks, drawings, and partially occluded images. In addition, the MMVID extracts visual information as suggested by a textual prompt.

Abstract: Example methods for generating an animated character in dance poses to music may include generating, by at least one processor, a music input signal based on an acoustic signal associated with the music, and receiving, by the at least one processor, a model output signal from an encoding neural network. A current generated pose data is generated using a decoding neural network, the current generated pose data being based on previous generated pose data of a previous generated pose, the music input signal, and the model output signal. An animated character is generated based on a current generated pose data; and the animated character caused to be displayed by a display device.

Abstract: Nanowire devices and fin devices are formed in a first region and a second region of a substrate. To form the devices, alternating layers of a first material and a second material are formed, inner spacers are formed adjacent to the layers of the first material, and then the layers of the first material are removed to form nanowires without removing the layers of the first material within the second region. Gate structures of gate dielectrics and gate electrodes are formed within the first region and the second region in order to form the nanowire devices in the first region and the fin devices in the second region.

Abstract: System for and method of producing a pure starch slurry and alcohol by using combined corn wet and dry milling processes. A simple and lower cost process to obtain starch inside floury endosperm is provided. The starch can be highly purified to meet green technology process needs. The remaining starch inside the corn kernels can be used as feedstock for alcohol production and to produce valuable co-products such as oil and various animal feeds.

Abstract: A memory device includes a plurality of word lines (WLs) above a substrate; a plurality of memory strings laterally isolated from each other, each of the plurality of memory strings being operatively coupled to a respective subset of the plurality of WLs; and a plurality of drivers, each of the plurality of drivers being configured to control a corresponding one of the plurality of WLs and including a first transistor having a first conductive type and a second transistor having a second conductive type opposite to the first conductive type.

Abstract: In some implementations, a scheduling platform may receive task information regarding a set of tasks for execution using a set of computing resources, wherein the task information includes, for the set of tasks, at least one of: a run time parameter, a priority parameter, or a success rate parameter. The scheduling platform may communicate with a computing resource management device to obtain first computing resource information regarding the set of computing resources. The scheduling platform may generate a first assignment of the set of tasks to the set of computing resources. The scheduling platform may transmit assignment information identifying the first assignment. The scheduling platform may receive second computing resource information. The scheduling platform may generate a second assignment of the set of tasks to the set of computing resources. The scheduling platform may transmit second assignment information identifying the second assignment.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a semiconductor substrate, an underlayer, a ferroelectric material layer, and a conductive layer. The underlayer covers the semiconductor substrate. The ferroelectric material layer covers the underlayer, in which the underlayer has a surface facing the ferroelectric material layer, and the surface has a root mean square roughness of less than 1 nm. The conductive layer covers the ferroelectric material layer.

Abstract: Methods of and system for growing and maintaining an optimized/ideal active yeast solution in the yeast tank and fermenter tank during the fermentation filling cycle are provided. A new yeast stage tank is used between the yeast tank and the fermenter tank allowing yeast to rapidly produce a huge amount of active young yeast cells for a fermenter during the filling period. A measurable and useful controlling factor, % DT/% Yeast by weight ratio (or “food” to yeast ratio), is used (e.g., % DT=glucose), which offers information on the health status of the yeast. The controlling factor is used to control the status of the yeast throughout the entire process.

Abstract: The current disclosure describes techniques for forming gate-all-around (“GAA”) devices from stacks of separately formed nanowire semiconductor strips. The separately formed nanowire semiconductor strips are tailored for the respective GAA devices. A trench is formed in a first stack of epitaxy layers to define a space for forming a second stack of epitaxy layers. The trench bottom is modified to have determined or known parameters in the shapes or crystalline facet orientations. The known parameters of the trench bottom are used to select suitable processes to fill the trench bottom with a relatively flat base surface.

Abstract: A device includes a substrate, a first sense amplifier disposed on the substrate, a first word line driver disposed on the substrate and situated adjacent the first sense amplifier in the x-direction, and a first memory array disposed above the first sense amplifier and above the first word line driver in the z-direction. A plurality of first conductive segments extend alternately in the x-direction and the y-direction, and are disposed between the first memory array and the first sense amplifier and configured to electrically connect the first sense amplifier to a first bit line of the first memory array. A plurality of second conductive segments extend alternately in the x-direction and the y-direction, and are disposed between the first memory array and the first word line driver and configured to electrically connect the first word line driver to a first word line of the first memory array.

Abstract: A memory device is provided, including a first bit cell including a first memory cell coupled to a first word line and a second bit cell including a second memory cell coupled to a second word line. The first and second memory cells are coupled to a first control line and further coupled to a first bit line through first and second nodes. The second bit cell further includes a first protection array coupled to the second memory cell at the second node coupled to the first bit line and further coupled to a third word line. When the first and second bit cells operate in different operational types, the first protection array is configured to generate an adjust voltage to the second node according to a voltage level of the third word line while the first bit cell is programmed.

Abstract: Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.

Abstract: An ovonic threshold switch (OTS) selector and a memory device including the OTS selector is provided. The OTS selector includes a switching layer formed of a GeCTe compound further doped with one or both of nitrogen and silicon, and exhibits improved thermal stability and electrical performance.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.