Patents by Inventor Ying-Lien Chen

Ying-Lien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of inhibiting growth using eltrombopag
    Patent number: 11160790
    Abstract: Provided is a method of inhibiting the growth of a fungus using eltrombopag, wherein the fungus is selected from the group consisting of Cryptococcus, Candida glabrata, and Trichophyton rubrum. Also provided are a combination agent that includes eltrombopag and a macrolide calcineurin inhibitor and a method of using the combination agent for inhibiting the growth of Cryptococcus. Also provided is a method of inhibiting virulence factor formation in Cryptococcus using eltrombopag.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 2, 2021
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Ying-Lien Chen, Hao-Tai Ko, Li-Hang Hsu, Sheng-Yung Yang
  • METHOD OF INHIBITING CRYPTOCOCCUS GROWTH USING ELTROMBOPAG
    Publication number: 20210121443
    Abstract: Provided is a method of inhibiting the growth of a fungus using eltrombopag, wherein the fungus is selected from the group consisting of Cryptococcus, Candida glabrata, and Trichophyton rubrum. Also provided are a combination agent that includes eltrombopag and a macrolide calcineurin inhibitor and a method of using the combination agent for inhibiting the growth of Cryptococcus. Also provided is a method of inhibiting virulence factor formation in Cryptococcus using eltrombopag.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 29, 2021
    Inventors: Ying-Lien Chen, Hao-Tai Ko, Li-Hang Hsu, Sheng-Yung Yang
  • Interconnect structure
    Patent number: 10446489
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 15, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • INTERCONNECT STRUCTURE
    Publication number: 20190067184
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 28, 2019
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • Interconnect structure and fabrication method thereof
    Patent number: 10153231
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: December 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • Method for forming copper material over substrate
    Patent number: 10079177
    Abstract: A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: September 18, 2018
    Assignee: United Microelectronics Corp.
    Inventors: Ko-Wei Lin, Ying-Lien Chen, Chun-Ling Lin, Huei-Ru Tsai, Hung-Miao Lin, Sheng-Yi Su, Tzu-Hao Liu
  • INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20180261537
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Application
    Filed: March 22, 2017
    Publication date: September 13, 2018
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su