Patents by Inventor Ying Ling Tseng

Ying Ling Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11444369
    Abstract: An antenna structure includes a metal mechanism element, a first radiation element, a second radiation element, a third radiation element, and a dielectric substrate. The metal mechanism element has a slot with a first closed end and a second closed end. The first radiation element has a feeding point. The second radiation element is coupled to the feeding point. The second radiation element and the first radiation element substantially extend away from each other. The third radiation element is coupled to a ground voltage. The third radiation element extends across the slot of the metal mechanism element. The dielectric substrate has a first surface and a second surface opposite to each other. The first radiation element, the second radiation element, and the third radiation element are disposed on the first surface of the dielectric substrate. The second surface of the dielectric substrate is adjacent to the slot.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: September 13, 2022
    Assignee: QUANTA COMPUTER INC.
    Inventors: Yi-Ling Tseng, Chin-Lung Tsai, Chung-Ting Hung, Kuan-Hsien Lee, Ying-Cong Deng
  • Publication number: 20220216053
    Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.
    Type: Application
    Filed: March 22, 2022
    Publication date: July 7, 2022
    Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
  • Patent number: 11289330
    Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
  • Publication number: 20210098253
    Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.
    Type: Application
    Filed: July 30, 2020
    Publication date: April 1, 2021
    Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng