Patents by Inventor Ying-Mei Lin

Ying-Mei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polish process control for improvement in within-wafer thickness uniformity
    Patent number: 9132523
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: September 15, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Chemical Mechanical Polish Process Control for Improvement in Within-Wafer Thickness Uniformity
    Publication number: 20120164918
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Application
    Filed: March 5, 2012
    Publication date: June 28, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Chemical mechanical polish process control for improvement in within-wafer thickness uniformity
    Patent number: 8129279
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: March 6, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Chemical Mechanical Polish Process Control for Improvement in Within-Wafer Thickness Uniformity
    Publication number: 20100093259
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Application
    Filed: October 13, 2008
    Publication date: April 15, 2010
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin