Abstract: Methods for forming a dielectric isolation region between two active regions are disclosed herein. A mandrel is formed on a substrate, then etched to form a trench. Spacers are formed on the sidewalls of the mandrel. The mandrel is removed, and the substrate is etched to form fins extending in a first direction in the two active regions, and of fins extending in a second direction. A mask is formed that exposes the substrate between the fins extending in the second direction. The substrate is etched to form a trench. The trench is filled with a dielectric material up to the top of the fins to form the dielectric isolation region. The methods provide better depth control during etching between the two active regions, and also permit the trench to extend deeper into the substrate due to reduced depth/width ratios during the etching steps.

Abstract: A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Abstract: A display device includes a light source module, a housing, a display panel, a circuit board and a first flexible substrate. The housing includes a base plate, a sidewall and a support part. The base plate is below the light source module. The sidewall forms an accommodation space for the light source module. The support part is connected to the sidewall and extends away from the base plate, wherein the support part has a recess recessed towards the base plate. The display panel is above the light source module and the support part. The circuit board is below the support part, and the support part is located between the display panel and the circuit board. The first flexible substrate connects the light source module to the circuit board through the recess, wherein one side of the recess supports the display panel, and another side supports the circuit board.

Abstract: A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Abstract: A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Abstract: A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Abstract: A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrificial gate electrode. A reshaping process is performed on the sacrificial gate electrode to form a reshaped sacrificial gate electrode. The reshaped sacrificial gate electrode includes a first portion along the top surface of the fin and a second portion along the sidewall of the fin. A width of the first portion decreases as the first portion extends from a top surface of the first portion toward the top surface of the fin. A width of the second portion decreases as the second portion extends from the top surface of the fin toward the substrate.

Abstract: Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Abstract: A display panel includes an inner frame, a backlight module, an outer frame, and a light modulation module. The inner frame includes an inner surface forming a light guide plate accommodating area in a surrounding manner. The backlight module includes a light guide plate and a first optical film. The light guide plate is disposed in the light guide plate accommodating area, and the first optical film is carried on the inner frame. The outer frame includes a bottom portion and a sidewall portion that are connected to each other, in which the bottom portion and the sidewall portion form a receiving area, and the inner frame and the backlight module are located in the receiving area. The light modulation module is disposed on the first optical film. An orthogonal projection of the light modulation module in a vertical direction completely falls within the light guide plate accommodating area.

Abstract: A display panel includes an inner frame, a backlight module, an outer frame, and a light modulation module. The inner frame includes an inner surface forming a light guide plate accommodating area in a surrounding manner. The backlight module includes a light guide plate and a first optical film. The light guide plate is disposed in the light guide plate accommodating area, and the first optical film is carried on the inner frame. The outer frame includes a bottom portion and a sidewall portion that are connected to each other, in which the bottom portion and the sidewall portion form a receiving area, and the inner frame and the backlight module are located in the receiving area. The light modulation module is disposed on the first optical film. An orthogonal projection of the light modulation module in a vertical direction completely falls within the light guide plate accommodating area.

Abstract: Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Abstract: Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Abstract: Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Abstract: A method for determining quantization numbers for each macro block in one video segment having a prescribed capacity is disclosed. The quantization numbers determine how much data will be preserved for that macro block. The method begins by determining a level of complexity for each macro block. Next, initial quantization numbers are chosen for the macro blocks by choosing the largest values possible without exceeding the prescribed capacity of the video segment. Final quantization numbers are selected based on respective ones of the initial quantization numbers proportioned according to the level of complexity for that macro block. The final quantization numbers may be increased or decreased so that the capacity of the video segment is maximized but not exceeded.

Abstract: A method for determining quantization numbers for each macro block in one video segment having a prescribed capacity is disclosed. The quantization numbers determine how much data will be preserved for that macro block. The method begins by determining a level of complexity for each macro block. Next, initial quantization numbers are chosen for the macro blocks by choosing the largest values possible without exceeding the prescribed capacity of the video segment. Final quantization numbers are selected based on respective ones of the initial quantization numbers proportioned according to the level of complexity for that macro block. The final quantization numbers may be increased or decreased so that the capacity of the video segment is maximized but not exceeded.