Abstract: A diffusion film is provided, including a matrix material including a reaction product of following components: a polythiol, a polyolefin, and a crosslinking agent having thiol and alkenyl functional groups; a photoluminescence material including at least a quantum dot or at least a fluorescent powder; and light diffusion particles including organic polymer particles and/or inorganic particles.

Abstract: A thin film transistor including a substrate, a first buffer layer, a gate, a gate insulation layer, a channel layer, a source and a drain is provided. The first buffer layer is disposed on the substrate and the first buffer is a silicide. The gate covers a portion of the first buffer layer, and the gate includes a first aluminum metal layer and a first protective layer disposed thereon. The gate insulation layer covers the gate, and the channel layer is disposed on part of the gate insulation layer. The source and the drain are disposed on the channel layer and separated form each other. Each of the source and the drain includes a second buffer layer, a second aluminum metal layer and a second protective layer. The second aluminum metal layer is disposed on the second buffer layer and the second protective layer is disposed thereon.

Abstract: A photo-mask stage of an exposure apparatus includes a fixed component to fix a first photo-mask, an exchanging component, which is able to assemble or to disassemble with the fixed component for fixing a second photo-mask.

Abstract: A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.

Abstract: A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.

Abstract: A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.

Abstract: A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.

Abstract: A robotic arm that has a main body and pads thereon can prevent electrostatic damage. These pads are used to carry substrates between and in processing machines. A material of these pads is the same as or similar to the material of the substrate to lower the amount of the electrostatic charges produced during the manufacturing process. Therefore, the electrostatic charges cannot damage the electronic devices on the substrate.