Abstract: The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

Abstract: The present application provides a high-voltage power semiconductor device and a method for manufacturing the same. A plurality of second resistive field plate structures is arranged in a terminal region of an epitaxial layer and extends through the epitaxial layer in a first direction to a substrate. The second resistive field plate structures are arranged concentrically and discontinuously around an active region in a first plane. The second resistive field plate structures and a third resistive field plate structure thereon form a ?-type combined resistive field plate structure.

Abstract: Provided herein systems and methods for processing cryopreserved cells without an expansion phase after thawing, including transfecting cells for gene editing purposes and cryopreserving transfected cells. Systems and methods for high-throughput processing of frozen cells are also provided. The systems and methods provided can be used to modify cells, including gene editing, in cell arrays.

Abstract: Provided herein systems and methods for processing cryopreserved cells without an expansion phase after thawing, including transfecting cells for gene editing purposes and cryopreserving transfected cells. Systems and methods for high-throughput processing of frozen cells are also provided. The systems and methods provided can be used to modify cells, including gene editing, in cell arrays.

Abstract: The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

Abstract: A shared-dielectric MOSFET device with a resistive-field-plate and a preparation method are provided. In the shared-dielectric MOSFET device, the semi-insulating resistive-field-plate electrically connected to the trench gate structure and the drain structure is introduced in the drift region of the existing trench gate MOS devices, and when the trench gate structure controls the MOS channel to be turned on or turned off, the semi-insulating resistive-field-plate can adjust the doping concentration of the drift region, to modulate the conductance of the on-state drift region and the distribution of a off-state high-voltage blocking electric field, thereby obtaining a lower on-resistance. Meanwhile, in the preparation method of the present disclosure, the modern 2.