Patents by Inventor Ying-Pin WU

Ying-Pin WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire field effect transistor detection device and the detection method thereof
    Patent number: 10784343
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: September 22, 2020
    Assignee: ACADEMIA SINICA
    Inventors: Chii Dong Chen, Li Chu Tsai, Chia Jung Chu, Ying Pin Wu
  • Nanowire Field Effect Transistor Detection Device and the Detection Method thereof
    Publication number: 20190206990
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 4, 2019
    Inventors: Chii Dong CHEN, Li Chu TSAI, Chia Jung CHU, Ying Pin WU
  • METHOD FOR MANUFACTURING NANOSTRUCTURES
    Publication number: 20170327372
    Abstract: There is provided a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of spherical Zn structures and oxidizing the spherical structures in ambient atmosphere at a temperature in the range of 350° C. to 600° C. for a time period in the range of h to 172 h, such that ZnO nanowires protruding from the spherical structures are formed. There is also provided a field emission arrangement comprising a cathode having the aforementioned ZnO nanowire structures arranged thereon.
    Type: Application
    Filed: November 19, 2015
    Publication date: November 16, 2017
    Applicant: Lightlab Sweden AB
    Inventors: Jonas TIRÉN, Yuan-Yao LI, Chia-Yen HSU, Ying-Pin WU