Patents by Inventor Ying Qian WANG

Ying Qian WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120262985
    Abstract: A method for forming a device is disclosed. The method includes providing a substrate prepared with a primary gate and forming a charge storage layer on the substrate over the primary gate. A secondary gate electrode layer is formed on the substrate over the charge storage layer. The charge storage and secondary gate electrode layers are patterned to form first and second secondary gates on first and second sides of the primary gate.
    Type: Application
    Filed: April 12, 2011
    Publication date: October 18, 2012
    Applicant: GLOBALFOUNDRIES SINGAPORE Pte. Ltd.
    Inventors: Ying Qian WANG, Yu CHEN, Swee Tuck WOO, Bangun INDAJANG, Sung Mun JUNG