Abstract: A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

Abstract: A semiconductor device and method of reducing the risk of underbump metallization poisoning from the application of underfill material is provided. In an embodiment a spacer is located between a first underbump metallization and a second underbump metallization. When an underfill material is dispensed between the first underbump metallization and the second underbump metallization, the spacer prevents the underfill material from creeping towards the second underbump metallization. In another embodiment a passivation layer is used to inhibit the flow of underfill material as the underfill material is being dispensed.

Abstract: A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

Abstract: A semiconductor device and method of reducing the risk of underbump metallization poisoning from the application of underfill material is provided. In an embodiment a spacer is located between a first underbump metallization and a second underbump metallization. When an underfill material is dispensed between the first underbump metallization and the second underbump metallization, the spacer prevents the underfill material from creeping towards the second underbump metallization. In another embodiment a passivation layer is used to inhibit the flow of underfill material as the underfill material is being dispensed.

Abstract: A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

Abstract: A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

Abstract: A method of treating a cancerous region in a breast of a patient comprising (i) imaging the breast in a three-dimensional coordinate system, (ii) stereotactically determining the location of the cancerous region in the breast, (iii) optionally determining the volume of the entire cancerous region to be treated, and (iv) while maintaining the breast in a three-dimensional coordinate system that is identical to or corresponds with the three-dimensional coordinate system used in (i), noninvasively exposing the cancerous region of the breast of the patient to a cancer-treatment effective dose of radiation; and equipment for use in such a method.

Abstract: A method of treating a cancerous region in a breast of a patient comprising (i) imaging the breast in a three-dimensional coordinate system, (ii) stereotactically determining the location of the cancerous region in the breast, (iii) optionally determining the volume of the entire cancerous region to be treated, and (iv) while maintaining the breast in a three-dimensional coordinate system that is identical to or corresponds with the three-dimensional coordinate system used in (i), noninvasively exposing the cancerous region of the breast of the patient to a cancer-treatment effective dose of radiation; and equipment for use in such a method.

Abstract: A system and method for immobilization of the human breast in a prone position during imaging and radiotherapy. The system includes a vacuum-assisted breast immobilization cup comprising two layers joined together with an air space between. The inner layer has densely perforated holes while the outer layer is airtight. When a negative vacuum is applied to the intermediate airspace the breast tissue is sucked against the mesh wall of the inner layer to preventing sliding. In addition, the cup assembly is locked into a fixed position against the patient torso via a body fixture, as well as against the patient support structure. The established geometric relationship among the cup, chest wall, imaging/treatment table or couch may be accurately repeated. The system further includes a three-dimensional localization system to uniquely place the breast in a coordinate system having fixed geometric relationship with the breast immobilization cup.

Abstract: A system and method for immobilization of the human breast in a prone position during imaging and radiotherapy. The system includes a vacuum-assisted breast immobilization cup comprising two layers joined together with an air space between. The inner layer has densely perforated holes while the outer layer is airtight. When a negative vacuum is applied to the intermediate airspace the breast tissue is sucked against the mesh wall of the inner layer to preventing sliding. In addition, the cup assembly is locked into a fixed position against the patient torso via a body fixture, as well as against the patient support structure. The established geometric relationship among the cup, chest wall, imaging/treatment table or couch may be accurately repeated. The system further includes a three-dimensional localization system to uniquely place the breast in a coordinate system having fixed geometric relationship with the breast immobilization cup.