Abstract: The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: Growth of homogeneous single crystals is carried out by a modified Bridgman-type process using a second melt of a different composition to replenish the first melt of a predetermined composition held in the crystal growth container. By controlling the replenishing rate and suppressing diffusion between the two melts, composition variations in the first melt and hence the growing crystal are compensated. The second melt may be maintained at a predetermined higher temperature than the first melt. The first melt may be agitated during crystal growth by rotation. A liquid encapsulant may be used.