Patents by Inventor Ying-Tsai Ting

Ying-Tsai Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Test method for memory
    Patent number: 9548138
    Abstract: A test method tests a memory device including a memory array having a plurality of symmetric memory cells, a plurality of word lines and a plurality of bit lines. In testing a first word line, a first bit line is charged to test a single bit of a first half of an adjacent first symmetric memory cell; and a second bit line is charged to test a single bit of a second half of an adjacent second symmetric memory cell. In testing a second word line, the first bit line is charged to test a single bit of the second half of an adjacent third symmetric memory cell; and the second bit line is charged to test a single bit of the first half of an adjacent fourth symmetric memory cell. In testing each of the word lines, each of the bit lines is charged once.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: January 17, 2017
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ying-Tsai Ting, Che-Chin Wu, Tsung-Yi Chou, Shih-Fu Huang
  • TEST METHOD FOR MEMORY
    Publication number: 20160064103
    Abstract: A test method tests a memory device including a memory array having a plurality of symmetric memory cells, a plurality of word lines and a plurality of bit lines. In testing a first word line, a first bit line is charged to test a single bit of a first half of an adjacent first symmetric memory cell; and a second bit line is charged to test a single bit of a second half of an adjacent second symmetric memory cell. In testing a second word line, the first bit line is charged to test a single bit of the second half of an adjacent third symmetric memory cell; and the second bit line is charged to test a single bit of the first half of an adjacent fourth symmetric memory cell. In testing each of the word lines, each of the bit lines is charged once.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 3, 2016
    Inventors: Ying-Tsai Ting, Che-Chin Wu, Tsung-Yi Chou, Shih-Fu Huang