Abstract: A device with a plurality of structures with different resistance values is formed on a substrate. A polysilicon layer is formed upon the substrate. A silicon oxide layer is formed over the substrate. A hard masking layer is formed over the silicon oxide layer. The hard masking layer includes a full thickness portion and a thinner portion. The polysilicon layer below the full thickness portion is lightly doped forming a high resistance region. Below the thinner portion the polysilicon layer is heavily doped forming a low resistance region. However, in spite of the differences in resistance, the high resistance region and the low resistance region have the same thickness.

Abstract: This method forms structures with different resistance values from a single polysilicon film formed on a substrate. Form a hard masking layer on the polysilicon film. Form a photoresist mask over the hard masking layer. Partially etch the hard masking layer through the photoresist mask to reduce the thickness of the polysilicon while leaving the remainder of the hard masking layer with the original thickness. The thickness is reduced in locations where a low resistance is to be located in the polysilicon film. Then dope the polysilicon layer through the hard masking layer with variable doping as a function of the reduced thickness and the original thickness of the hard masking layer.

Abstract: A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.

Abstract: The problem of how to prevent trapping charge during high energy ion implantation, as part of a PLDD, NLDD, PS/D, and NS/D manufacturing process, has been solved through use of a protective cap of photoresist which is applied to the gate prior to the high energy ion implantation. Said protective cap is readily removed after ion implantation.