Abstract: Provided is an electroplating apparatus including an electroplating tank, an anode and a cathode, a power supply, and a regulating plate. The electroplating tank accommodates electrolyte. Both the anode and the cathode are disposed in the electroplating tank. The power supply is electrically connected to the anode and the cathode. The regulating plate is disposed between the anode and the cathode. The regulating plate includes a plurality of mesh openings and a plurality of metal sheets, and at least part of the metal sheets is electrically connected with the cathode. An electroplating method is also provided.

Abstract: An electroplating apparatus including an anode and a cathode, a power supply, and a regulating plate is provided. The power supply is electrically connected to the anode and the cathode. The regulating plate is arranged between the anode and the cathode. The regulating plate includes an insulating grid plate and a plurality of magnetic components. The plurality of magnetic components are uniformly and randomly arranged on the insulating grid plate. An electroplating method is also provided.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.

Abstract: A coupling system includes an optical fiber configured to carry an optical signal. The coupling system further includes a chip in optical communication with the optical fiber. The chip includes a substrate. The chip further includes a grating on a first side of the substrate, wherein the grating is configured to receive the optical signal. The chip further includes an interconnect structure over the grating on the first side of the substrate, wherein the interconnect structure defines a cavity aligned with the grating. The chip further includes a first polysilicon layer on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate.

Abstract: A coupling system includes an optical fiber configured to carry an optical signal. The coupling system further includes a chip in optical communication with the optical fiber. An angle between the optical fiber and a top surface of the chip ranges from about 92-degrees to about 88-degrees. The chip includes a grating configured to receive the optical signal; and a waveguide, wherein the grating is configured to receive the optical signal and redirect the optical signal along the waveguide. ms.

Abstract: A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.

Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

Abstract: Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly <100> surfaces with reduced or negligible growth on <110> surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body.

Abstract: A wheeled vehicle includes a vehicle body, a vibration absorbing element, an auxiliary arm, a wheel, and a driving member. The vehicle body includes a fixing plate. The housing connected to the fixing plate. The vibration absorbing element includes a first end and a second end. The first end is fixed to the housing. The auxiliary arm includes a connecting end and a free end. The connecting end is connected to the housing. The free end is configured to swing relative to the connecting end. The free end is fixed to the second end. The wheel includes an axle, and the axle is rotationally connected to the free end. The driving member is fixed to the housing and configured to drive the wheel.

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

Abstract: An overdrive system includes a compressor that compresses an input signal to result in a compressed signal; a weighting device that generates a weighted sum of a current compressed signal and a current input signal, thereby resulting in a weighted current signal; and an overdriver that performs an overdrive operation according to a previous compressed signal and the weighted current signal.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A high-mobility resource allocation system and method for simulated users are provided, including a base station, antennas and a simulated mobile-user generator. The simulated mobile-user generator organizes a test field by taking the base station as the circle center, and measures and records multiple channel information based on the detection signals of the antennas. The machine learning module is used to perform simulation channel training according to channel information to generate simulated user channels that approximates real-world scenarios. A mobile-user organizing module organizes multiple simulated mobile users and their mobile channel information in the test field based on the simulated user channel, generates multiple simulated mobile user signals, and uses a resource-allocation optimizing module based on simulated mobile user signals, channel interference information upon moving, etc. to maximize the number of simulated mobile users while considering the quality of service.

Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.

Abstract: An image processing method includes the steps of lighting up at least a part of light emitting units of a light emitting device; capturing a plurality of detection images corresponding to a plurality of sections of the light emitting device respectively, wherein each section includes a plurality of lighted-up light emitting units, each detection image includes a plurality of light spots respectively corresponding to the light emitting units of the associated section, and every two adjacent sections have an overlap area including at least one lighted-up light emitting unit; and stitching the detection images of the adjacent sections together by taking the light spots corresponding to at least one lighted-up light emitting unit of the overlap area as alignment reference spots, so that the light emitting statuses of all the light emitting units are presented by a single image.